Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN
Parameter Name | Attribute value |
Objectid | 1940081162 |
Parts packaging code | TO-220AB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | ISOLATED |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 20 A |
Maximum drain current (ID) | 20 A |
Maximum drain-source on-resistance | 0.087 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | P-CHANNEL |
Maximum power dissipation(Abs) | 25 W |
Maximum pulsed drain current (IDM) | 80 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |