0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Central Semiconductor |
package instruction | O-XALF-W2 |
Reach Compliance Code | not_compliant |
ECCN code | EAR99 |
Is Samacsys | N |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1 V |
JEDEC-95 code | DO-35 |
JESD-30 code | O-XALF-W2 |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 1.5 A |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Maximum output current | 0.2 A |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.5 W |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 200 V |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |