Standard SRAM, 512KX8, 120ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Micross |
Parts packaging code | DIP |
package instruction | DIP, |
Contacts | 32 |
Reach Compliance Code | compliant |
ECCN code | 3A001.A.2.C |
Maximum access time | 120 ns |
JESD-30 code | R-CDIP-T32 |
JESD-609 code | e0 |
length | 40.64 mm |
memory density | 4194304 bit |
Memory IC Type | STANDARD SRAM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 524288 words |
character code | 512000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 512KX8 |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum seat height | 4.3434 mm |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | TIN LEAD |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 15.24 mm |
Base Number Matches | 1 |