IRFC9120 datasheet, PDF - EEWORLD Datasheet

IRFC9120: DescriptionPower Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE; CategoryDiscrete semiconductor The transistor; File Size293KB，6 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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IRFC9120 Overview

Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Maker	Microsemi
Parts packaging code	DIE
package instruction	UNCASED CHIP, X-XUUC-N
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	1.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	X-XUUC-N
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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