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3.0SMCJ6.0CATR-A

Description
Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size427KB,6 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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3.0SMCJ6.0CATR-A Overview

Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Bidirectional, 1 Element, Silicon, SMC, 2 PIN

3.0SMCJ6.0CATR-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-C2
Reach Compliance Codecompliant
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage7.37 V
Minimum breakdown voltage6.67 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage6 V
surface mountYES
technologyAVALANCHE
Terminal surfacePure Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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