CYM1840PD-25C datasheet, PDF - EEWORLD Datasheet

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CYM1840PD-25C: DescriptionSRAM Module, 256KX32, 25ns, CMOS; Categorystorage storage; File Size173KB，6 Pages; ManufacturerCypress Semiconductor

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CYM1840PD-25C Overview

SRAM Module, 256KX32, 25ns, CMOS

CYM1840PD-25C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Cypress Semiconductor
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T60
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	SRAM MODULE
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	60
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX32
Output characteristics	3-STATE
Exportable	NO
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP60,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.16 A
Minimum standby current	4.5 V
Maximum slew rate	1.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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CYM1840PD-25C Related Products

	CYM1840PD-25C	CYM1840PD-30C	CYM1840PD-45C	CYM1840PD-35C	CYM1840PD-55C	CYM1840PD-20C
Description	SRAM Module, 256KX32, 25ns, CMOS	SRAM Module, 256KX32, 30ns, CMOS	SRAM Module, 256KX32, 45ns, CMOS	SRAM Module, 256KX32, 35ns, CMOS	SRAM Module, 256KX32, 55ns, CMOS	SRAM Module, 256KX32, 20ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor	Cypress Semiconductor
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	25 ns	30 ns	45 ns	35 ns	55 ns	20 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-T60	R-XDMA-T60	R-XDMA-T60	R-XDMA-T60	R-XDMA-T60	R-XDMA-T60
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	60	60	60	60	60	60
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX32	256KX32	256KX32	256KX32	256KX32	256KX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP60,.6	DIP60,.6	DIP60,.6	DIP60,.6	DIP60,.6	DIP60,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	1.12 mA	1.12 mA	1.12 mA	1.12 mA	1.12 mA	1.12 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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