NCS5000
Integrated RF Schottky
Detector
The NCS5000 is an integrated Schottky detector intended for use as
a level detector in RF measurement/power control applications such as
those found in GSM handsets. The detector converts the peak RF
voltage applied to a DC level. The circuit consists of an RF Schottky
detector, a reference Schottky diode, as well as biasing and control
circuitry. There is an enable input that allows the part to be placed in a
low power state when not in use.
The detector is designed for operation up to 2.0 GHz and can operate
with input power levels up to +25 dBm. There is a fixed offset of 10 mV
(nominal) between the Reference Detector and the RF Detector under
no applied RF. The two detectors are monolithically integrated so that
they closely track overtemperature, voltage and process.
The NCS5000 is housed in a very small TSOP−6 package ideal for
portable applications. The TSOP−6 package is a lower profile,
footprint compatible package to the SOT23−6.
Features
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TSOP−6
SN SUFFIX
CASE 318G
PIN CONNECTIONS AND
MARKING DIAGRAM
DET_OUT
V
CC
Enable
1
2
3
6
5
4
REF
GND
RF_In
•
•
•
•
•
•
•
•
•
•
•
•
Wide Operating Frequency Range to 2.0 GHz
2.7 V − 5.5 V Operating Voltage
Very Low Operating Current of 300
mA
Enable Control to Place the Part in a Low Current Standby Mode
Typical Standby Current of < 1.0
mA
−40°C to 85°C Operating Temperature Range
Very Small TSOP−6 Package
Pb−Free Package is Available
Cellular Handsets (GSM and DCS1800/PCS1900)
Wireless Data Modems
Transmitter Power Measurement and Control
Test Equipment
V
CC
(Top View)
BAC = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
BACAYWG
G
Typical Applications
ORDERING INFORMATION
Device
NCS5000SNT1
Package
TSOP−6
TSOP−6
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
Enable
RF_In
Compensated
Current Sources
NCS5000SNT1G
DET_OUT
REF
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
GND
This circuit has 28 active transistors
Figure 1.
©
Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 6
Publication Order Number:
NCS5000/D
NCS5000
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Name
DET_OUT
V
CC
Enable
RF_In
GND
REF
Description
This is the RF Detector Output. This signal is proportional to the peak RF voltage applied at the RF_In pin.
Input power supply.
Control signal to turn on and off the device. If this signal is not used, this pin should be connected directly
to V
CC
. A logic high on this input turns on the device.
This is the input to the RF detector. The signal must be AC−coupled into this input with a good quality RF capacitor.
Ground.
This is the reference detector output. Nominal this signal is 10 mV higher than DET_OUT when no RF signal is
applied at RF_In.
MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise noted.)
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Á
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Á
ÁÁÁÁ
Á
Á
Á
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Á
Á
Á
ÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
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Á
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ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
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Á
Á
Á
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Á
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ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á
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Á
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Á
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Á
Á
Maximum Input Power on RF Pin
Maximum Power Supply
PMAX
28
dBm
V
V
VCCMAX
−
6.0
ESD Rating for RF_In (HBM) All Other Pins are 2.5 kV (HBM)
Storage Temperature Range
500
T
stg
T
J
−40 to +125
+150
°C
°C
−
−
Maximum Junction Temperature
Maximum Input Voltage on Pins
Minimum Input Voltage on Pins
VIMAX
VIMIN
V
CC
+ 0.3 V
−0.3 V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Rating
Symbol
Value
Unit
RECOMMENDED OPERATING CONDITIONS
Characteristic
RF Input (50
W
Equivalent)
Supply Voltage
Operating Temperature Range
Symbol
RF
in
V
CC
T
A
Min
−
2.7
−40
Typ
−
−
−
Max
25
5.5
85
Unit
dBm
V
°C
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NCS5000
ELECTRICAL CHARACTERISTICS
(V
CC
= 2.8 V, for typical values; Min and Max values at T
A
= 25°C)
Characteristic
RF Operating Frequency
Operating Current Consumption
(V
enable
= 2.4 V, No RF Applied)
Standby Current Consumption
(V
enable
= 0.4 V, No RF Applied)
Power Supply Ripple Rejection
(V
CC
= 3.6 V, V
ripple
= 0.5 V
PP
, No RF)
Detector Output (No RF Applied)
Reference Output (No RF Applied)
Reference − Detector Output Differential Voltage
(No RF Applied)
Detector Output
F
in
= 1.0 GHz, RF
in
= −5.0 dBm (50
W)
F
in
= 1.0 GHz, RF
in
= 5.0 dBm (50
W)
F
in
= 1.0 GHz, RF
in
= 15 dBm (50
W)
Enable Logic High
Enable Logic Low
Enable Input Current, V
CC
= 2.7 V, V
enable
= 2.4 V
V
bat
Power
Amplifier
RF
in
APC
Control
Input
20 dB
V
bat
Coupler
RF
out
NCP500
2.8 V LDO
MCU
Port
Enable
1 kHz
10 kHz
DET_OUT
REF
REF−
DET_OUT
−
1
6
1,6
−
−
−
−
V
ih
V
il
I
in
3
3
3
2.4
0
0
100
335
1285
−
−
−
−
−
−
−
0.4
30
V
V
mA
Symbol
−
I
CC
(op)
I
CC
(stby)
R
R
Pin
4
2
2
2
−
−
40
50
5
56
41
45
55
10
−
−
50
60
15
mV
mV
mV
mV
Min
100
−
−
Typ
−
−
1
Max
2000
500
10
Unit
MHz
mA
mA
dB
V
CC
Compensated
Current Sources
RF_In
Ramp
Control
(DAC)
+
−
+
−
REF
DET_OUT
Note: The RF signal must be AC−coupled into the RF_In pin
NCS5000
GND
Figure 2. Typical Application Block Diagram
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NCS5000
10000
T
A
= 25°C
V
CC
= 2.7 V
VOLTAGE (mV)
65
V
DET
− V
DET(NO RF)
(mV)
1000
60
REF
55
100
897.5 MHz
10
1 GHz
1
2 GHz
1747.5 MHz
50
DET_OUT
45
0.1
−25 −20 −15 −10 −5
0
5
10
15
20
25
30
40
−40
−15
10
35
60
85
RF INPUT POWER (dBm)
TEMPERATURE (°C)
Figure 3. Detector Output Voltage vs.
RF Input Power
Figure 4. Detector and Reference Output
Variation Overtemperature
(V
CC
= 2.7 V, No RF Applied)
65
20
DIFFERENTIAL VOLTAGE (mV)
15
V
OUT
(mV)
REF − DET_OUT
10
60
REF
55
50
DET_OUT
5
45
0
−40
−15
10
35
60
85
40
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
TEMPERATURE (°C)
V
CC
VOLTAGE (V)
Figure 5. Offset Between RF Detector and
Reference Detector Output Voltage
Overtemperature (V
CC
= 2.7 V, No RF Applied)
3000
2500
I
CC
+ I
enable
(mA)
2000
I
CC
(μA)
1500
1000
500
V
CC
= 5.5 V
V
CC
= 2.7 V
0
−30 −25 −20 −15 −10
−5
0
5
10
15
20
T
A
= 25°C
V
CC
= 2.7 V
F
in
= 100 MHz
500
450
400
350
300
250
200
150
100
50
0
−40
Figure 6. Detector and Reference Output
Variation Over V
CC
Bias
(T
A
= 255C, No RF Applied)
−15
10
35
60
85
RF INPUT POWER (dBm)
TEMPERATURE (°C)
Figure 7. Current Consumption vs. Input Power
Figure 8. I
CC
Variation Overtemperature
V
CC
= 5.5 V, No RF Applied
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NCS5000
APPLICATION INFORMATION
The NCS5000 is an integrated RF Schottky detector
designed for use in level detector and power amplifier
control circuits. The device is optimized for large signal
applications (P
in
u
−20 dBm) such as those found in GSM
handsets and data modems. This device has been designed
for applications that require operation from a single Li−Ion
or multi− Ni−MH battery pack. The operating range is
2.7 V − 5.5 V so the device can be powered directly from the
battery or a low drop out regulator. To support power
sequencing, an Enable circuitry is included which allows the
device to be placed into a very low power state (t3.0
mW)
when not in use.
In addition to the RF detector, a reference detector is
included so the NCS5000 can be used to implement a
differential detector. Since the RF and reference detectors
are integrated on the same silicon, they track each other
tightly overtemperature, bias voltage, and process. Each
detector is biased with approximately 45
mA
of current and
there is a built−in offset of 10 mV (nom) between the RF and
the Reference Detector.
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