SPH3270FPDBH datasheet, PDF - EEWORLD Datasheet

SPH3270FPDBH: DescriptionPower Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size137KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SPH3270FPDBH Overview

Power Field-Effect Transistor,

Parameter Name	Attribute value
Objectid	145054368027
package instruction	,
Reach Compliance Code	compliant
Country Of Origin	USA
ECCN code	EAR99
YTEOL	6.8
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	1100 mJ
Shell connection	ISOLATED
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	700 V
Maximum drain current (ID)	32 A
Maximum drain-source on-resistance	0.094 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	15 pF
JESD-30 code	R-MDFM-F12
Number of components	2
Number of terminals	12
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	208 W
Maximum pulsed drain current (IDM)	100 A
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	300 ns
Maximum opening time (tons)	100 ns

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