HYMP112S64LM8-C5 datasheet, PDF

HYMP112S64LM8-C5: DescriptionDDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200; Categorystorage storage; File Size404KB，17 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMP112S64LM8-C5 Overview

DDR DRAM Module, 128MX64, 0.5ns, CMOS, PDMA200

Parameter Name	Attribute value
Objectid	1125504576
package instruction	DIMM, DIMM200,24
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
Maximum access time	0.5 ns
Maximum clock frequency (fCLK)	267 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N200
memory density	8589934592 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	200
word count	134217728 words
character code	128000000
Maximum operating temperature	55 °C
Minimum operating temperature
organize	128MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.064 A
Maximum slew rate	2.16 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL

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