IM65X08CJE datasheet, PDF - EEWORLD Datasheet

IM65X08CJE: DescriptionStandard SRAM, 1KX1, 250ns, CMOS, CDIP16; Categorystorage storage; File Size381KB，6 Pages; ManufacturerGeneral Electric Solid State

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IM65X08CJE Overview

Standard SRAM, 1KX1, 250ns, CMOS, CDIP16

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	101267486
package instruction	DIP, DIP16,.3
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Maximum access time	250 ns
JESD-30 code	R-XDIP-T16
JESD-609 code	e0
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	16
word count	1024 words
character code	1000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX1
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum standby current	0.00001 A
Minimum standby current	2 V
Maximum slew rate	0.002 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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