V30100P-E3/45 datasheet, PDF - EEWORLD Datasheet

V30100P-E3/45: Descriptiondual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.57 V at IF = 8 A; CategoryDiscrete semiconductor diode; File Size96KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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V30100P-E3/45 Overview

dual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.57 V at IF = 8 A

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
Reach Compliance Code	unknown
ECCN code	EAR99
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.71 V
Maximum non-repetitive peak forward current	120 A
Maximum operating temperature	150 °C
Maximum output current	15 A
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
technology	SCHOTTKY

	V30100P-E3/45	V30100P_08
Description	dual high-voltage trench mos barrier schottky rectifier ultra low VF = 0.57 V at IF = 8 A	15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD

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