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MIG20J805E

Description
TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,20A I(C)
CategoryDiscrete semiconductor    The transistor   
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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MIG20J805E Overview

TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,20A I(C)

MIG20J805E Parametric

Parameter NameAttribute value
Objectid101607188
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)20 A
Collector-emitter maximum voltage600 V
Gate-emitter maximum voltage20 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)60 W
VCEsat-Max2.6 V
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