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BUK9226-75A
N-channel TrenchMOS logic level FET
Rev. 02 — 27 January 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
R
DSon
Quick reference data
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 13;
see
Figure 12
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 49 A; V
sup
≤
75 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Min
-
-
-
-
-
-
Typ
-
-
-
-
Max Unit
75
45
114
29
V
A
W
mΩ
mΩ
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Symbol Parameter
Static characteristics
20.9 24.6 mΩ
22.1 26
NXP Semiconductors
BUK9226-75A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
2
1
3
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9226-75A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BUK9226-75A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
2 of 14
NXP Semiconductors
BUK9226-75A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 5 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
V
GSM
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Max
75
75
10
45
32
182
114
175
175
15
45
182
120
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
Source-drain diode
Avalanche ruggedness
[1]
Peak drain current is limited by chip, not package.
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9226-75A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
3 of 14
NXP Semiconductors
BUK9226-75A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
03nb19
R
DSon
= V
DS
/I
D
t
p
= 10 us
100 us
P
δ
=
t
p
T
10
1 ms
D.C.
10 ms
t
p
T
t
100 ms
10
V
DS
(V)
10
2
1
1
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9226-75A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 27 January 2011
4 of 14
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