DG508A_MIL/509A_MIL
Vishay Siliconix
Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers
(Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.)
FEATURES
D
D
D
D
D
D
Low On-Resistance: 240
W
TTL and CMOS Logic Compatible
Low Power: 30 mW
Break-Before-Make Switching
44-V Power Supply Rating
Transition Time: 600 ns
BENEFITS
D
D
D
D
Easily Interfaced
Low Power Consumption
Low System Crosstalk
Wide Analog Signal Range
D
D
D
D
D
APPLICATIONS
Communication Systems
ATE
Data Acquisition Systems
Audio Signal Routing and Multiplexing
Medical Instrumentation
DESCRIPTION
The DG508A_MIL, an 8-channel single-ended analog
multiplexer, is designed to connect one of eight inputs to a
common output as determined by a 3-bit binary address (A
0
,
A
1
, A
2
).
enable (EN) are TTL or CMOS compatible over the full
specified operating temperature range.
The DG509A_MIL, a dual 4-channel analog multiplexer, is
designed to connect one of four differential inputs to a common
output as determined by its 2-bit binary address (A
0
, A
1
) logic.
Break-before-make switching action protects against
momentary shorting of the input signals.
Fabricated in the Vishay Siliconix Plus-40 process, the
absolute maximum voltage rating is extended to 44 V, allowing
increased operating headroom for standard
"15-V
signal
swings and operation with
"20-V
supplies. An epitaxial layer
prevents latch up.
The DG508A_MIL/509A_MIL are available in hermetic
packages. For plastic packages, use the DG408/409 as
pin-for-pin replacements.
A channel in the on state conducts current equally well in both
directions. In the off state each channel blocks voltages up to
the power supply rails, normally 30 V peak-to-peak. An enable
(EN) function allows for device selection when several
multiplexers are used All control inputs, address (A
X
) and
For applications requiring address data latching, the
DG528/529 is recommended. DG408/409 is recommended
for higher precision applications. For wideband/video routing
and multiplexing, the DG538A is recommended.
FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS
Dual-In-Line
EN
A
0
EN
V–
S
1
S
2
S
3
S
4
D
1
2
3
4
5
6
7
8
Decoders/Drivers
16
15
14
13
12
11
10
A
1
A
2
GND
S
1
V+
NC
S
5
S
6
S
7
S
8
S
2
S
3
7
8
15
14
S
5
S
6
6
Key
3
V–
4
5
2
1
20
19
18
17
GND
V+
NC
A
0
LCC
NC A
1
A
2
Decoders/Drivers
DG508A_MIL
16
DG508A_MIL
Top View
9
9
S
4
10
D
11
NC
12
S
8
13
S
7
Top View
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Document Number: 70067
S-00405—Rev. C, 21-Feb-00
5-1
DG508A_MIL/509A_MIL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS
ORDERING INFORMATION - DG508A_MIL
Temp Range
0 to 70_C
–25 to 85_C
–40 to 85_C
TRUTH TABLE - DG508A_MIL
A
2
X
0
0
0
0
1
1
1
1
Package
16-Pin Plastic DIP
16-Pin CerDIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
Part Number
DG508ACJ
DG508ABK
DG508ADY
DG508AAK
DG508AAK/883
DG508AAZ/883
7705201EA
7705201EC
7705201FA
7705201FC
JM38510/19007BEA
JM38510/19007BEC
A
1
X
0
0
1
1
0
0
1
1
A
0
X
0
1
0
1
0
1
0
1
EN
0
1
1
1
1
1
1
1
1
On Switch
None
1
2
3
4
5
6
7
8
–55 to 125 C
55 125_C
16-Pin Sidebraze
16-Pin Flat Pack
16-Pin Sidebraze
Logic “0” = V
AL
v
0.8 V
0
Logic “1” = V
AH
w
2.4 V
1
X = Don’t Care
Dual-In-Line and SOIC
EN
A
0
EN
V–
S
1a
S
2a
S
3a
S
4a
D
a
1
2
3
4
5
6
7
8
Decoders/Drivers
16
15
14
13
12
11
10
9
A
1
GND
V–
V+
S
1a
S
1b
NC
S
2b
S
3b
S
4b
D
b
S
2a
S
3a
7
8
5
6
Key
3
4
2
A
0
LCC
NC A
1
1
20
GND
19
18
17
16
15
14
V+
S
1b
NC
S
2b
S
3b
Decoders/Drivers
DG509A_MIL
9
S
4a
10
D
a
11
NC
12
D
b
13
S
4b
DG509A_MIL
Top View
Top View
ORDERING INFORMATION - DG509A_MIL
Temp Range
Package
16-Pin CerDIP
–55 to 125 C
55 125_C
LCC-20
16-Pin Sidebraze
TRUTH TABLE - DG509A_MIL
A
1
X
0
0
1
1
Part Number
DG509AAK
DG509AAK/883
DG509AAZ/883
JM38510/19008BEA
JM38510/19008BEC
A
0
X
0
1
0
1
EN
0
1
1
1
1
Logic “0” = V
AL
v
0.8 V
0
Logic “1” = V
AH
w
2.4 V
1
X = Don’t Care
On Switch
None
1
2
3
4
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Document Number: 70067
S-00405—Rev. C, 21-Feb-00
DG508A_MIL/509A_MIL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
,
V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or
20 mA, whichever occurs first
Storage Temperature
(K Suffix) . . . . . . . . . . . . . . . . . . . –65 to 150_C
(J and Y Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)
b
16-Pin CerDIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
LCC-20
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
Notes:
a. Signals on S
X
, D
X
or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 12 mW/_C above 75_C.
Current (Any Terminal, Except S or D) . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
P
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
r
DS(on)
Match
Source Off
Leakage Current
Drain Off
Leakage Current
L k
C
t
V
ANALOG
r
DS(on)
Dr
DS(on)
I
S(off)
V
D
=
"10
V, I
S
= –200
mA
–10 V < V
S
< 10 V
V
EN
= 0 V, V
S
=
"10
V
V
D
=
#10
V
V
EN
= 0 V
V
D
=
"10
V
V
S
=
#10
V
DG508A_MIL
DG509A_MIL
DG508A_MIL
I
D(on)
V
S
= V
D
=
"10
V
DG509A_MIL
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
–1
–50
–10
–200
–10
–100
–10
–200
–10
–100
–15
240
6
1
50
10
200
10
100
10
200
10
100
nA
A
15
400
500
V
W
%
A Suffix
–55 to 125_C
Symbol
S b l
V+ = 15 V, V– = –15 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
T
Min
d
Typ
c
Max
d
U i
Unit
I
D(off)
Drain On
Leakage Current
L k
C
t
Digital Control
Logic Input Current
g
p
Input V lt
I
t Voltage High
Hi h
Logic Input Current
Input Voltage Low
V
A
= 2.4 V
I
AH
V
A
= 15 V
I
AL
V
EN
= 0 V, 2.4 V, V
A
= 0 V
Room
Full
Room
Full
Room
Full
–10
–30
–10
–30
–0.002
0.006
–0.002
10
30
mA
A
Dynamic Characteristics
Transition Time
Break-Before-Make Time
Enable Turn-On Time
Enable Turn-Off Time
Charge Injection
Off Isolation
Logic Input Capacitance
Source Off Capacitance
Drain Off Capacitance
t
TRANS
t
OPEN
t
ON(EN)
t
OFF(EN)
Q
OIRR
C
in
C
S(off)
C
D(off)
See Figure 2
See Figure 4
See Figure 3
See Figure 5
V
EN
= 0 V, R
L
= 1 kW , C
L
= 15 pF
V
S
= 7 V
RMS
, f = 500 kHz
f = 1 MHz
V
EN
= 0 V, V
S
= 0 V, f = 140 kHz
V
EN
= 0 V, V
D
= 0 V
,
f = 140 kH
kHz
DG508A_MIL
DG509A_MIL
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
0.6
0.2
1
0.4
6
68
8
6
25
12
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pF
F
1.5
1.0
pC
dB
1.0
ms
Document Number: 70067
S-00405—Rev. C, 21-Feb-00
5-3
DG508A_MIL/509A_MIL
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Otherwise Specified
Parameter
P
Power Supplies
Positive Supply Current
Negative Supply Current
I+
I–
V
EN
= 0 V or 2.4 V
Room
Room
–1.5
1.3
–0.7
2.4
mA
A Suffix
–55 to 125_C
Symbol
S b l
V+ = 15 V, V– = –15 V
V
IN
= 2.4 V, 0.8 V
f
Temp
b
T
Min
d
Typ
c
Max
d
U i
Unit
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply
"5
V
–
r DS(on) Drain-Source On-Resistance (
W
)
500
2.0
400
"7.5
V
1.5
"10
V
"15
V
"20
V
100
0.5
V T (V)
300
2.5
Input Switching Threshold vs. V+ and V–
Supply Voltages
200
1.0
0
–20
0
–15
–10
–5
0
5
10
15
20
”5
”10
”15
”20
V
D
– Drain Voltage (V)
V+, V– Positive and Negative Supplies (V)
500
r DS(on) Drain-Source On-Resistance (
W
)
–
450
400
350
300
250
25_C
200
150
100
50
0
–15
–10
–5
0
5
V
D
– Drain Voltage (V)
10
15
–55_C
125_C
16
14
12
10
Q (pC)
8
6
4
2
0
–15
Charge Injection vs. Analog Voltage (V
S
)
V+ = 15 V
V– = –15 V
r
DS(on)
vs. V
D
and Temperature
V+ = 15 V
V– = –15 V
–10
–5
0
5
V
S
– Source Voltage (V)
10
15
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Document Number: 70067
S-00405—Rev. C, 21-Feb-00
DG508A_MIL/509A_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Current vs. Switching Frequency
6
V+ = 15 V
V– = –15 V
–20
I+
2
I+, I– (mA)
X TALK (dB)
–40
Plastic
–60
0
V+ = 15 V
V– = –15 V
ref. 0 dBm
CerDIP
Crosstalk vs. Frequency
4
0
–2
I–
–4
–80
–100
–6
10 k
100 k
f – Frequency (Hz)
1M
–120
1k
10 k
100 k
f – Frequency (Hz)
1M
10 M
Off Isolation vs. Frequency
0
V+ = 15 V
V– = –15 V
ref. 0 dBm
CerDIP
–40
ISOL (dB)
Plastic
–60
t TRANS , t OPEN (ns)
1400
Switching Time vs. Temperature
V+ = 15 V
V– = –15 V
1200
–20
1000
t
TRANS
800
t
OPEN
–80
600
–100
400
–120
1k
10 k
100 k
f – Frequency (Hz)
1M
10 M
200
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
Switching Time vs. Positive Supply Voltage
1100
1000
t TRANS , t OPEN (ns)
900
800
I D, I S
700
600
500
400
300
200
10
12
14
16
18
20
22
–55
t
OPEN
t
TRANS
1 nA
100 nA
10 nA
Leakages vs. Temperature
V+ = 15 V
V– = –15 V
V
D
=
"14
V
I
D(on)
, I
D(off)
100 pA
I
S(off)
10 pA
–35 –15
5
25
45
65
85
105
125
V+ – Positive Supply (V)
Temperature (_C)
Document Number: 70067
S-00405—Rev. C, 21-Feb-00
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