V826632M24SCJZ-C0 datasheet, PDF

V826632M24SCJZ-C0: DescriptionDDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA172; Categorystorage storage; File Size166KB，14 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V826632M24SCJZ-C0 Overview

DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA172

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1125506423
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	2
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N172
JESD-609 code	e3
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of terminals	172
word count	33554432 words
character code	32000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM172,20
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	2.8 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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