MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Features:
MEMS Technology
Direct pin to pin drop-in replacement for industry-standard packages
LVCMOS/HCMOS Compatible Output
Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2 mm x mm
Pb-free, Halogen-free, Antimony-free
RoHS and REACH compliant
Fast delivery times
IM801 Series
Typical Applications:
Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Electrical Specifications:
Frequency Range
Frequency Stability
Operating Temperature
Supply Voltage (Vdd) 10%
Current Consumption
OE Disable Current
Standby Current
Waveform Output
Symmetry
Rise / Fall Time
Logic “1”
Logic “0”
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
Startup Time
Enable/Disable time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
1.000 MHz to 110.000MHz
See Part Number Guide
See Part Number Guide
See Part Number Guide
3.8 mA typ./ 4.5 mA max
3.7 mA typ./ 4.2 mA max
3.5 mA typ./ 4.1 mA max
4.2 mA max
4.0 mA max
2.1 µA typ./ 4.3 µA max
1.1 µA typ. / 2.5 µA max
0.2 µA typ. / 1.3 µA max
LVCMOS / HCMOS
45%/55%
1.0 nSec typ./ 2.0 nSec max
1.3 nSec typ./ 2.5 nSec max
90% of Vdd min
10% of Vdd max
70% of Vdd min
30% of Vdd max
50kΩ min / 87kΩ typ. 150kΩ max
2.0MΩ min
5.0 mSec max
130 nSec max
5.0 mSec max
1.8pSec typ./ 3.0pSec max
1.8pSec typ./ 3.0pSec max.
12.0 pSec typ./ 25.0 pSec max
14.0 pSec typ./ 30.0 pSec max
0.5pSec typ./ 0.9 pSec max
1.3pSec typ./ 2.0pSec max
Inclusive of Initial Tolerance, Operating Temperature Range, Load,
Voltage, and Aging
No load condition, F = 20 MHz, Vdd = +2.8 V to +3.3 V
No load condition, F = 20 MHz, Vdd = +2.5 V
No load condition, F = 20 MHz, Vdd = +1.8 V
Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state
Vdd = +1.8 V, OE = GND, Output in high-Z state
ST
= GND, Vdd = +2.8 V to +3.3V
ST
= GND, Vdd = +2.5 V
ST
= GND, Vdd = +1.8 V
50% of waveform all Vdds
Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform
Vdd = +1.8 V from 20% to 80% of waveform
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic low or
ST
logic high
Pin 1,
ST
logic Low
Measured from the time Vdd reaches its rated min value
F = 110 Mhz. For other frequencies, T_oe =100 nSec = 3 cycles
Measured from the time
ST
pin crosses 50% threshold
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
F = 75 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 75 MHz, Vdd = +1.8 V
F = 75 MHz, Integration Bandwidth = 900 kHz to 7.5 MHz
F = 75 MHz, Integration Bandwidth = 12 kHz to 20.0 MHz
Notes:
All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
Typical values are at +25ºC and nominal supply voltage.
Absolute Maximum Limits
Storage Temperature
Supply Voltage (Vdd)
Electrostatic Discharge
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
260ºC max
150ºC max
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 1 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Ordering Information:
Part Number Guide
Packages
IM801B – 5.0 x 3.2
IM801C – 3.2 x 2.5
IM801D – 2.5 x 2.0
IM801E – 2.0 x 1.6
Input Voltage
1 = +1.8 V
6 = +2.5 V
2 = +2.8 V
7 = +3.0 V
3 = +3.3 V
Operating Temperature
1 = 0ºC to +70ºC
2 = -40ºC to +85ºC
3 = -20ºC to +70ºC
Output Drive
Strength
- = Default
(see tables 2
through 6)
Stability
(ppm)
F = ±20
A = ±25
B = ±50
Select Function
H = Tri-State
S = Standby
O = N/C
IM801 Series
Frequency
-
Frequency
Sample Part Number:
IM801C-62-FS-20.0000MHz
This 20.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive
Strength (Rise and Fall Time) is the default value 1.0 nSec per Table 3 with 15 pF load. With Pin 1 function as Standby
Sample Part Number:
IM801D-71RAO-66.0000MHz
This 66.0000 MHz oscillator in a 2.5 x 2.0 package with stability ±25 ppm from 0ºC to +70ºC using a supply voltage of +3.0 V. The Output Drive
Strength (Rise and Fall Time) is the R drive strength is 4.54 nSec per Table 5 with 30 pF load. With Pin 1 function is not connected
Notes:
Not all options are available at all frequencies and temperatures ranges.
Please consult with sales department for any other parameters or options.
Oscillator specification subject to change without notice.
Test Circuit
Waveform
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 2 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Performance Plots:
IM801 Series
Figure 1: Idd vs Frequency
Figure 2: Frequency vs Temperature
Figure 3: RMS Period Jitter vs Frequency
Figure 4: Duty Cycle vs Frequency
Figure 5: 20% to 80% Rise Time vs Temperature
Figure 6: 20% to 80% Fall Time vs Temperature
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 3 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Performance Plots (Cont.)
IM801 Series
Figure 7: RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency
Figure 8: RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency
Notes:
All plots are measured with 15pF load at room temperature unless otherwise stated.
Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz
Environmental Specifications:
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 at +260ºC
Pb Free Solder Reflow Profile
Ts max to T
L
(Ramp-up Rate)
Preheat
Temperature min (Ts min)
Temperature typ (Ts typ)
Temperature max (Ts max)
Time (Ts)
Ramp-up Tate (T
L
to Tp
Time Maintained Above
Temperature (T
L
)
Time (T
L)
Peak Temperature (Tp)
Time within 5ºC to Peak
Temperature (Tp)
Ramp-down Rate
Tune 25ºC to Peak Temperature
Moisture Sensitivity Level (MSL)
3ºC / second max
150ºC
175ºC
200ºC
60 to180 seconds
3ºC / second max
217ºC
60 to 150 seconds
260ºC max for seconds
20 to 40 seconds
6ºC / second max
8 minute max
Level 1
Units are backward compatible with +240ºC reflow processes
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 4 of 9
MEMS Oscillator, Low Power, LVCMOS/HCMOS Compatible, 1.000 MHz to 110.000 MHz
Pin Functionally
Pin Description
Pin
Symbol
OE
ST
Tri-state
Standby
Functionality
High or Open = specified frequency output
Low = Output is high impedance, only output is disabled.
High or Open = specified frequency output.
Low = Output is low. Device goes to sleep mode. Supply current
reduces to standby current.
Any voltage between 0.0 V to Vdd or Open = specified frequency
output
Pin 1 has no functiion
Electrical ground
Oscillator output
Power supply voltage
IM801 Series
Pin Assignments
1
N/C
No Connect
OE
ST 1
N/C
Top View
4
Vdd
2
GND
Power
3
Out
Output
4
Vdd
Power
Notes:
1. In OE or
ST
mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally
driven. If Pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.
GND 2
3
OUT
Pin 1 Configuration Options (OE, or
Output Enable (OE) Mode
, or NC)
Pin 1 of the IM801 can be factory-programmed to support three modes: Output Enable (OE), Standby (
ST
) or No Connect (NC).
In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device
continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the
output is typically enabled in <1 µSec.
Standby
Mode
In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The
current is reduced to a standby current, typically in the range of a few µA. When
ST
is pulled High, the device goes through the
“resume” process, which can take up to 5 mSec.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level
on Pin 1.
Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.
Parameters
Active current 20.0 MHz (max +1.80 VDC)
OE disable current (max +1.80 VDC)
Standby current (typical +1.80 VDC)
OE enable time at 20.0 MHz (max)
Resume time from standby
(max, all frequency)
Output driver in OE disable/standby mode
Table 1 OE vs.
OE
4.1 mA
4.0 mA
N/A
200 nSec
N/A
High Z
vs. NC
ST
4.1 mA
N/A
0.6 µA
N/A
5 mSec
NC
4.1 mA
N/A
N/A
N/A
N/A
N/A
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 01/30/16_A
Page 5 of 9
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