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HMC390LP4ETR

Description
Narrow Band Low Power Amplifier, 3550MHz Min, 3900MHz Max, 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24
CategoryWireless rf/communication    Radio frequency and microwave   
File Size247KB,6 Pages
ManufacturerHittite Microwave(ADI)
Websitehttp://www.hittite.com/
Environmental Compliance
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HMC390LP4ETR Overview

Narrow Band Low Power Amplifier, 3550MHz Min, 3900MHz Max, 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24

HMC390LP4ETR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerHittite Microwave(ADI)
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Characteristic impedance50 Ω
structureCOMPONENT
JESD-609 codee3
Maximum operating frequency3900 MHz
Minimum operating frequency3550 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND LOW POWER
Terminal surfaceMatte Tin (Sn)
Maximum voltage standing wave ratio2
Base Number Matches1
HMC390LP4
/
390LP4E
v02.0505
MMIC VCO w/ BUFFER
AMPLIFIER, 3.55 - 3.9 GHz
Features
Pout: +4.7 dBm
Phase Noise: -112 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 42 mA
QFN Leadless SMT Package, 16 mm
2
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Local Loop (WLL)
• VSAT & Microwave Radio
• Test Equipment & Industrial Controls
• Military
Functional Diagram
General Description
The HMC390LP4 & HMC390LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 3.55 to 3.9 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.7 dBm typical from a
single supply of 3V @ 42 mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4 x 4
mm surface mount package.
11
VCO
S
& PLOs - SMT
Electrical Specifi cations,
T
A
= +25° C, Vcc = +3V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
6
5
16
3.3
-5
0.4
0
42
10
1.5
Min.
Typ.
3.55 - 3.9
4.7
-112
10
Max.
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
11 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC390LP4ETR Related Products

HMC390LP4ETR HMC390LP4TR
Description Narrow Band Low Power Amplifier, 3550MHz Min, 3900MHz Max, 4 X 4 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-24 Narrow Band Low Power Amplifier, 3550MHz Min, 3900MHz Max, 4 X 4 MM, LEADLESS, PLASTIC, SMT, QFN-24
Is it lead-free? Lead free Contains lead
Is it Rohs certified? conform to incompatible
Maker Hittite Microwave(ADI) Hittite Microwave(ADI)
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Characteristic impedance 50 Ω 50 Ω
structure COMPONENT COMPONENT
JESD-609 code e3 e0
Maximum operating frequency 3900 MHz 3900 MHz
Minimum operating frequency 3550 MHz 3550 MHz
Maximum operating temperature 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C
RF/Microwave Device Types NARROW BAND LOW POWER NARROW BAND LOW POWER
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb)
Maximum voltage standing wave ratio 2 2

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