JAN2N5251 datasheet, PDF - EEWORLD Datasheet

JAN2N5251: DescriptionPower Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerSolitron Devices Inc.

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JAN2N5251 Overview

Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
package instruction	POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JEDEC-95 code	TO-114
JESD-30 code	O-MUPM-D3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	350 W
Maximum power dissipation(Abs)	350 W
Certification status	Not Qualified
Guideline	MIL
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

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