MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz
Features:
MEMS Technology
Direct pin to pin drop-in replacement for industry-standard packages
LVCMOS Compatible Output
Industry-standard package 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, and 7.0 x 5.0 mm x mm
Six supply voltages options, +1.8 V, +2.5 V, +2.8 V, +3.3 V and +2.25 V to +3.63 V continuous
Pb-free, Halogen-free, Antimony-free
RoHS and REACH compliant
Fast delivery times
IM802 Series
Typical Applications:
Fibre Channel
Server and Storage
GPON, EPON
100M / 1G /10G Ethernet
Electrical Specifications:
Frequency Range
Frequency Stability
Operating Temperature
Supply Voltage (Vdd) ±10%
Current Consumption
OE Disable Current
Standby Current
Waveform Output
Symmetry (50% of waveform)
Rise / Fall Time
Logic “1”
Logic “0”
Input Characteristics
Input High Voltage
Input Pull-up Impedance
Startup Time
Enable Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
115.000 MHz to 137.000MHz
See Part Number Guide
See Part Number Guide
See Part Number Guide
6.2 mA typ./ 7.5 mA max
5.5 mA typ./ 6.4 mA max
4.9 mA typ./ 5.6 mA max
4.2 mA max
4.0 mA max
2.6 µA typ./ 4.3 µA max
1.4 µA typ./ 2.5 µA max
0.6 µA typ./1.3 µA max
LVCMOS / HCMOS
45%/55%
1.0 nSec typ./ 2.0 nSec max
1.3 nSec typ./ 2.5 nSec max
90% of Vdd min
10% of Vdd max
70% of Vdd max
30% of Vdd min
50kΩ min / 87kΩ typ. 150kΩ max
2.0MΩ min
5 mSec max
122 nSec max
5 mSec max
1.9 pSec typ,/ 3.0 pSec max
1.8 pSec typ./ 4.0 pSec max
12.0 pSec typ./ 25.0 pSec max
14.0 pSec typ./ 30.0 pSec max
0.5 pSec typ./ 0.9 pSec max
1.3 pSec typ./ 2.0 pSec max
Inclusive of Initial Tolerance, Operating Temperature Range, Load,
Voltage, and Aging (First year at +25ºC)
No load condition, F = 125 MHz, Vdd = +2.8V, +3.0V, = +3.3 V
No load condition, F = 125 MHz, Vdd = +2.5 V
No load condition, F = 125 MHz, Vdd = +1.8 V
Vdd = +2.5 V to +3.3 V, OE = GND, Output in high-Z state
Vdd = +1.8 V, OE = GND, Output in high-Z state
ST
= GND, Vdd = +2.8 V to +3.3V
ST
= GND, Vdd = +2.5 V
ST
= GND, Vdd = +1.8 V
All supply voltages
Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V from 20% to 80% of waveform
Vdd = +1.8 V from 20% to 80% of waveform
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin 1, OE logic high or logic or
ST
logic high
Pin 1,
ST
logic Low
Measured from the time Vdd reaches its rated minimum value
F=137 MHz For other frequencies Toe = 100 nSec + 3 cycles
Measured from the time
ST
pin crosses 50% threshold
F= 125 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 125 MHz, Vdd = +1.8 V
F = 125 MHz, Vdd = +2.5 V, +2.8 V, + 3.0 V or +3.3 V
F = 125 MHz, Vdd = +1.8 V
Integration Bandwidth = 900 kHz to 7.5 MHz
Integration Bandwidth = 12 kHz to 20.0 MHz
Notes:
1. All min and max limits are specified over temperature and rated operating voltage with 15pF output unless otherwise stated.
2. Typical values are at +25ºC and nominal supply voltage.
3333
Absolute Maximum
Limits
Storage Temperature
Supply Voltage (Vdd)
Electrostatic Discharge
Solder Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
-65ºC to +150ºC
-0.5 VDC to 4.0 VDC
2000 V max
260ºC max
150ºC max
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 08/18/17_B
Page 1 of 9
MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz
Ordering Information
Part Number Guide
Packages
IM802A – 7.0 x 5.0
IM802B – 5.0 x 3.2
IM802C – 3.2 x 2.5
IM802D – 2.5 x 2.0
IM802E – 2.0 x 1.6
Input Voltage
1 = +1.8 V
6 = +2.5 V
2 = +2.7 V
7 = +3.0 V
3 = +3.3 V
8 = +2.25 V to +3.63 V
Operating
Temperature
1 = 0ºC to +70ºC
2 = -40ºC to +85ºC
3 = -20ºC to +70ºC
Output Drive
Strength
- = Default
(see tables 2
through 6)
Stability
(ppm)
E = ±10
F = ±20
A = ±25
B = ±50
Select
Function
H = Tri-state
S = Standby
O = N/C
IM802 Series
Frequency
- Frequency
Sample Part Number:
IM802C-62-FS-100.0000MHz
This 100.0000 MHz oscillator in a 3.2 x 2.5 package with stability ±20 ppm from -40ºC to +85ºC using a supply voltage of +2.5 V. The Output Drive Strength
(Rise and Fall Time) is 0.96 nSec per Table 3 with 15 pF load. With Pin 1 function as Standby
Sample Part Number:
IM802B-71EAO-133.0000MHz
This 133.0000 MHz oscillator in a 5.0 x 3.2 package with stability ±25 ppm from 0ºC to +70ºC using a supply voltage of +3.0 V. The Output Drive Strength
(Rise and Fall Time) is 1.00 nSec per Table 3 with 15 pF load. With Pin 1 function is not connected
Notes:
Not all options are available at all frequencies and temperatures ranges.
Please consult with sales department for any other parameters or options.
Oscillator specification subject to change without notice.
Test Circuit
Waveform
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 08/18/17_B
Page 2 of 9
MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz
Performance Plots:
IM802 Series
Figure 1: Idd vs Frequency
Figure 2: Frequency vs Temperature, 1.8 V
Figure 3: RMS Period Jitter vs Frequency
Figure 4: Duty Cycle vs Frequency
Figure 5: 20% to 80% Rise Time vs Temperature
Figure 6: 20% to 80% Fall Time vs Temperature
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 08/18/17_B
Page 3 of 9
MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz
Performance Plots (Cont.)
IM802 Series
Figure 7: RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz vs Frequency)
Figure 8: RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz vs Frequency
Notes:
All plots are measured with 15pF load at room temperature unless otherwise stated.
Phase noise plots are measured with Agilent E5052B signal source analyzer integration range is up to 5 MHz for carrier frequencies below 40 MHz
Environmental Specifications:
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL Level 1 at +260ºC
Pb Free Solder Reflow Profile
Ts max to T
L
(Ramp-up Rate)
Preheat
Temperature min (Ts min)
Temperature typ (Ts typ)
Temperature max (Ts max)
Time (Ts)
Ramp-up Tate (T
L
to Tp
Time Maintained Above
Temperature (T
L
)
Time (T
L)
Peak Temperature (Tp)
Time within 5ºC to Peak
Temperature (Tp)
Ramp-down Rate
Tune 25ºC to Peak Temperature
Moisture Sensitivity Level (MSL)
3ºC / second max
150ºC
175ºC
200ºC
60 to180 seconds
3ºC / second max
217ºC
60 to 150 seconds
260ºC max for seconds
20 to 40 seconds
6ºC / second max
8 minute max
Level 1
Units are backward compatible with +240ºC reflow processes
ILSI America Phone 775-851-8880
●
Fax 775-851-8882
●email:
e-mail@ilsiamerica.com
●
www.ilsiamerica.com
Specifications subject to change without notice
Rev: 08/18/17_B
Page 4 of 9
MEMS Oscillator, Low Power, LVCMOS, 115.000 MHz to 137.000 MHz
Pin Functionally
Pin
Symbol
OE
ST
Tri-state
Standby
Pin Description
Functionality
High or Open = specified frequency output
Low = Output is high impedance, only output is disabled.
High or Open = specified frequency output.
Low = Output is low. Device goes to sleep mode. Supply current
reduces to standby current.
Any voltage between 0.0 V to Vdd or Open = specified frequency
output
Pin 1 has no functiion
Electrical ground
Oscillator output
Power supply voltage
IM802 Series
Pin Assignments
1
N/C
No Connect
OE
ST 1
N/C
Top View
4
Vdd
2
GND
Power
3
Out
Output
4
Vdd
Power
Notes:
1. In OE or
ST
mode, a pull-up resistor of 10.0 kΩ or less is recommended if Pin 1 is not externally
driven. If Pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Pin 4 (Vdd) and Pin 1 (GND) is required.
GND 2
3
OUT
Pin 1 Configuration Options (OE, or
Output Enable (OE) Mode
, or NC)
Pin 1 of the IM802 can be factory-programmed to support three modes: Output Enable (OE), Standby (
ST
) or No Connect (NC).
In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device
continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the
output is typically enabled in <1 µSec.
Standby
Mode
In the ST mode, a device enters into the standby mode when Pin 1 pulled Low. All internal circuits of the device are turned off. The
current is reduced to a standby current, typically in the range of a few µA. When
ST
is pulled High, the device goes through the
“resume” process, which can take up to 5 mSec.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal mode and outputs the specified frequency regardless of the logic level
on Pin 1.
Table 1 below summarizes the key relevant parameters in the operation of the device in OE, ST, or NC mode.
This circuit is all you need to amplify 4V to 2500V! The most comprehensive analysis of the internal circuit of an electric mosquito swatter on the Internet~...
5G industrial router is a kind of wireless data transmission function that uses public wireless network to provide users with wireless data transmission. How to choose a good 5G industrial router is n...
I bought a WS2812 ring board and wanted to use it to make an analog clock. Normally, 60 LEDs are the ideal choice, but because of the high price and large size, I finally chose a board with 24 LEDs. I...
How to route Kelvin type switch PCB?
For example:
For switches like NVH4L020N120SC1 (TO-247-4L), does S1 need to be laid together with S2 when laying copper on the PCB? Or should S1 and S2 be laid apa...
I recently encountered a MOS tube application and I don’t know how to solve it. I would like to ask my friends in the group to help me solve it.
Two MOS tubes are used in the sending interface of the ...
Sensor
京公网安备 11010802033920号
EEWORLD
