V58C2512804SAF6 datasheet, PDF

V58C2512804SAF6: DescriptionCache DRAM Module, 64MX8, 0.7ns, CMOS, PBGA60; Categorystorage storage; File Size906KB，60 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V58C2512804SAF6 Overview

Cache DRAM Module, 64MX8, 0.7ns, CMOS, PBGA60

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Objectid	1126060231
package instruction	BGA, BGA60,9X12,40/32
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	CACHE DRAM MODULE
memory width	8
Number of terminals	60
word count	67108864 words
character code	64000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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