Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
Parameter Name | Attribute value |
Objectid | 1934736791 |
package instruction | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V |
Maximum drain current (ID) | 0.16 A |
Maximum drain-source on-resistance | 12 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 10 pF |
JEDEC-95 code | TO-226AA |
JESD-30 code | O-PBCY-W3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |