AO8403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
Standard Product AO8403 is Pb-free (meets
ROHS & Sony 259 specifications). AO8403L is a Green
Product ordering option. AO8403 and AO8403L are
electrically identical.
Features
V
DS
(V) = -20V
I
D
= -4 A (V
GS
= -4.5V)
R
DS(ON)
< 42mΩ (V
GS
= -4.5V)
R
DS(ON)
< 52mΩ (V
GS
= -2.5V)
R
DS(ON)
< 70mΩ (V
GS
= -1.8V)
ESD Rating: 3000V HBM
TSSOP-8
Top View
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
T
A
=25°C
Power Dissipation
A
Maximum
-20
±8
-4
-3.5
-30
1.5
1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO8403
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±4.5V
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-4A
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
-0.3
-25
-0.55
35
48
45
8
56
16
-0.78
Min
-20
-1
-5
±1
±10
-1
A
42
60
52
70
-1
-2.2
1750
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
21
nC
nC
nC
ns
ns
ns
ns
ns
nC
Typ
Max
Units
V
µA
µA
µA
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
1450
205
160
6.5
17.2
1.3
4.5
9.5
17
94
35
31
13.8
V
GS
=-4.5V, V
DS
=-10V, I
D
=-4A
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=-4A, dI/dt=100A/µs
I
F
=-4A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev1: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO8403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
V
GS
=-1.5V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
V
GS
=-1.8V
R
DS(ON)
(m
Ω
)
60
V
GS
=-2.5V
40
V
GS
=-4.5V
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
I
D
=-4A
-I
S
(A)
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
25°C
125°C
1.6
I
D
=-4A, V
GS
=-2.5V
1.4
I
D
=-2A, V
GS
=-1.8V
2
0
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
-8V
-4.5V
-3.0V
-2.0V
-I
D
(A)
-I
D
(A)
-2.5V
6
4
125°C
10
V
DS
=-5V
8
1.2
I
D
=-4A, V
GS
=-4.5V
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Alpha & Omega Semiconductor, Ltd.
AO8403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0
5
10
15
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=-10V
I
D
=-4A
Capacitance (pF)
2400
2000
1600
1200
800
C
oss
400
C
rss
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
40
10µs
30
Power (W)
100µs
1ms
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
R
DS(ON)
10.0 limited
20
1.0
1s
10s
DC
0.1
0.1
1
-V
DS
(Volts)
10
10ms
0.1s
10
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
京公网安备 11010802033920号
EEWORLD
