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APT5012LNR

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size890KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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APT5012LNR Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

APT5012LNR Parametric

Parameter NameAttribute value
MakerMicrosemi
Parts packaging codeTO-264AA
package instruction,
Contacts3
Reach Compliance Codecompliant
ConfigurationSingle
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)42 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)520 W
surface mountNO
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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