Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Maker | Microsemi |
Parts packaging code | TO-264AA |
package instruction | , |
Contacts | 3 |
Reach Compliance Code | compliant |
Configuration | Single |
Minimum drain-source breakdown voltage | 500 V |
Maximum drain current (Abs) (ID) | 42 A |
Maximum drain-source on-resistance | 0.12 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 520 W |
surface mount | NO |
Base Number Matches | 1 |