K4H510838C-ZLB3T datasheet, PDF

K4H510838C-ZLB3T: DescriptionDDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60; Categorystorage storage; File Size393KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H510838C-ZLB3T Overview

DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Reach Compliance Code	unknown
Maximum access time	0.7 ns
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e3
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Humidity sensitivity level	1
Number of terminals	60
word count	67108864 words
character code	64000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA60,9X12,40/32
Package shape	RECTANGULAR
Package form	GRID ARRAY
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.005 A
Maximum slew rate	0.36 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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