DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99
BLU99/SL
UHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
UHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the u.h.f.
band. The transistor is also very
suitable for application in the
900 MHz mobile radio band.
FEATURES
•
multi-base structure and diffused
emitter-ballasting resistors for an
optimum temperature profile;
•
gold metallization ensures
excellent reliability.
The BLU99 has a 4-lead stud
envelope with a ceramic cap
(SOT122A). All leads are isolated
from the stud. The BLU99/SL is a
studless version (SOT122D).
QUICK REFERENCE DATA
R.F. performance at T
h
= 25
°C
in a common-emitter class-B circuit.
MODE OF OPERATION
narrow band; c.w.
V
CE
V
12,5
12,5
f
MHz
470
900
P
L
W
5
4
>
typ.
G
p
dB
BLU99
BLU99/SL
η
C
%
10,5
>
7,0 typ.
60
60
PIN CONFIGURATION
PINNING - SOT122A; SOT122D
PIN
fpage
DESCRIPTION
collector
emitter
base
emitter
4
1
2
3
4
age
4
1
3
1
3
2
Top view
MBK187
2
MSB055
Fig.1
Simplified outline.
SOT122A
(BLU99).
Fig.2
Simplified outline.
SOT122D
(BLU99/SL).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
peak value; f
>
1 MHz
D.C. power dissipation up to T
mb
= 50
°C
R.F. power dissipation
f
>
1 MHz; T
mb
= 25
°C
Storage temperature
Operating junction temperature
P
tot (r.f.)
T
stg
T
j
max.
max.
19 W
200
°C
−65
to
+
150
°C
I
C
;I
C(AV)
I
CM
P
tot (d.c.)
max.
max.
max.
0,8 A
2,5 A
12,5 W
V
CBO
V
CEO
V
EBO
max.
max.
max.
36 V
16 V
3 V
BLU99
BLU99/SL
handbook, halfpage
1
MDA372
Tmb = 50
°C
Th = 70
°C
handbook, halfpage
28
MDA373
Ptot
IC
(A)
20
II
(W)
III
12
I
10
−1
4
1
10
VCE (V)
10
2
0
20
40
60
80
100
Th (°C)
R
th mb-h
= 0,6 K/W.
I Continuous d.c. operation
II Continuous r.f. operation (f
>
1 MHz).
III Short-time r.f. operation during mismatch (f
>
1 MHz).
Fig.3 D.C. SOAR.
Fig.4 Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 9 W; T
mb
= 25
°C)
From junction to mounting base
(d.c. dissipation)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(rf)
R
th mb-h
=
=
7,5 K/W
0,6 K/W
R
th j-mb(dc)
=
10 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 10 mA
Collector-emitter breakdown voltage
open base; I
C
= 20 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy; L = 25 mH; f = 50 Hz
R
BE
= 10
Ω
D.C. current gain
(2)
I
C
= 0,6 A; V
CE
= 10 V
Transition frequency at f = 500 MHz
(1)
I
C
= 0,6 A; V
CE
= 12,5 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 12,5 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12,5 V
Collector-stud capacitance
Notes
1. Measured under pulse conditions: t
p
= 50
µs; δ <
0,01.
2. Measured under pulse conditions: t
p
= 300
µs; δ <
0,01.
C
re
C
cs
typ.
typ.
C
c
typ.
f
T
typ.
h
FE
E
SBR
>
>
typ.
I
CES
<
V
(BR)EBO
>
V
(BR)CEO
>
V
(BR)CBO
>
BLU99
BLU99/SL
36 V
16 V
3 V
5 mA
1 mJ
25
100
4,0 GHz
7,5 pF
5 pF
1,2 pF
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLU99
BLU99/SL
handbook, halfpage
120
MDA374
handbook, halfpage
5
MDA375
hFE
fT
(GHz)
4
80
3
2
40
1
0
0
0.8
1.6
IC (A)
2.4
0
0
0.4
0.8
1.2
1.6
IE (A)
2
Fig.5
V
CE
= 10 V; T
j
= 25
°C;
typ. values.
Fig.6
V
CB
= 12,5 V; f = 500 MHz; T
j
= 25
°C;
typ. values.
handbook, halfpage
16
Cc
MDA376
(pF)
14
12
10
8
6
0
4
8
12
16
20
VCB (V)
Fig.7 I
E
= i
e
= 0; f = 1 MHz; typ. values.
March 1993
5