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BLU99/SL

Description
uhf power transistor
CategoryDiscrete semiconductor    The transistor   
File Size112KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BLU99/SL Overview

uhf power transistor

BLU99/SL Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeSOT
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Manufacturer packaging codeSOT122D
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeNPN
Maximum power consumption environment12.5 W
Minimum power gain (Gp)10.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)4000 MHz
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99
BLU99/SL
UHF power transistor
Product specification
March 1993

BLU99/SL Related Products

BLU99/SL BLU99 BLU99_SL
Description uhf power transistor uhf power transistor uhf power transistor
Maker NXP NXP -
Parts packaging code SOT SOT -
package instruction DISK BUTTON, O-CRDB-F4 POST/STUD MOUNT, O-CRPM-F4 -
Contacts 4 4 -
Manufacturer packaging code SOT122D SOT122A -
Reach Compliance Code unknown unknown -
ECCN code EAR99 EAR99 -
Other features HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS -
Maximum collector current (IC) 0.8 A 0.8 A -
Collector-emitter maximum voltage 16 V 16 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 25 25 -
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND -
JESD-30 code O-CRDB-F4 O-CRPM-F4 -
Number of components 1 1 -
Number of terminals 4 4 -
Maximum operating temperature 200 °C 200 °C -
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
Package shape ROUND ROUND -
Package form DISK BUTTON POST/STUD MOUNT -
Polarity/channel type NPN NPN -
Maximum power consumption environment 12.5 W 12.5 W -
Minimum power gain (Gp) 10.5 dB 10.5 dB -
Certification status Not Qualified Not Qualified -
surface mount YES NO -
Terminal form FLAT FLAT -
Terminal location RADIAL RADIAL -
transistor applications AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 4000 MHz 4000 MHz -

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