Power Field-Effect Transistor, 26A I(D), 500V, 0.14ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-25
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| Parts packaging code | MODULE |
| package instruction | MODULE-25 |
| Contacts | 25 |
| Reach Compliance Code | unknown |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 1300 mJ |
| Shell connection | ISOLATED |
| Configuration | COMPLEX |
| Minimum drain-source breakdown voltage | 500 V |
| Maximum drain current (Abs) (ID) | 26 A |
| Maximum drain current (ID) | 26 A |
| Maximum drain-source on-resistance | 0.14 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-XUFM-X25 |
| JESD-609 code | e0 |
| Number of components | 4 |
| Number of terminals | 25 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 208 W |
| Maximum pulsed drain current (IDM) | 105 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
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