IBM13N16644JCA-360T datasheet, PDF

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IBM13N16644JCA-360T: DescriptionSynchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168; Categorystorage storage; File Size341KB，18 Pages; ManufacturerIBM; Websitehttp://www.ibm.com

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IBM13N16644JCA-360T Overview

Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168

IBM13N16644JCA-360T Parametric

Parameter Name	Attribute value
Maker	IBM
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	1.48 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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IBM13N16644JCA

IBM13N16734JCA

16M x 64/72 One-Bank Unbuffered SDRAM Module

Features

• 168-Pin Unbuffered 8-Byte Dual In-Line Memory

Module

• Intended for PC100 applications

• Clock Frequency: 100MHz

• Clock Cycle: 10.0ns

• -260 and -360 speed sorts

• Inputs and outputs are LVTTL (3.3V) compatible

• Single 3.3V

0.3V Power Supply

• Single Pulsed RAS interface

• SDRAMs have four internal banks

• Module has one physical bank

• Fully Synchronous to positive Clock Edge

• Data Mask for Byte Read/Write control

• Auto Refresh (CBR) and Self Refresh

• Automatic and controlled Precharge commands

• Programmable Operation:

- CAS Latency: 2, 3

- Burst Type: Sequential or Interleave

- Burst Length: 1, 2, 4, 8, Full-Page

(Full-Page supports Sequential burst only)

- Operation: Burst Read and Write or Multiple

Burst Read with Single Write

• Suspend Mode and Power Down Mode

• 12/10/2 Addressing (Row/Column/Bank)

• 4096 Refresh cycles distributed across 64ms

• Card size: 5.25" x 1.375" x 0.106"

• Gold contacts

• SDRAMs in TSOP Type II Package

• Serial Presence Detect with Write Protect

Description

IBM13N16644JCA / IBM13N16734JCA are unbuf-

fered 168-pin Synchronous DRAM Dual In-Line

Memory Modules (DIMMs) which are organized as

16Mx64 and 16Mx72 high-speed memory arrays

and are configured as one 16M x 64/72 physical

bank. The DIMMs use eight (16Mx64) or nine

(16Mx72) 16Mx8 SDRAMs in 400mil TSOP II pack-

ages. The DIMMs achieve high-speed data transfer

rates of up to 100MHz by employing a prefetch/pipe-

line hybrid architecture that supports the JEDEC 1N

rule while allowing very low burst power.

All control, address, and data input/output circuits

are synchronized with the positive edge of the exter-

nally supplied clock inputs.

All inputs are sampled at the positive edge of each

externally supplied clock (CK0, CK2). Internal oper-

ating modes are defined by combinations of RAS,

CAS, WE, S0/S2, DQMB, and CKE0 signals. A

command decoder initiates the necessary timings

for each operation. A 14-bit address bus accepts

address information in a row/column multiplexing

arrangement.

Prior to any Access operation, the CAS latency,

burst type, burst length, and Burst operation type

must be programmed into the DIMM by address

inputs A0-A9 during the Mode Register Set cycle.

The DIMM uses serial presence detects imple-

mented via a serial EEPROM using the two-pin IIC

protocol. The first 128 bytes of serial PD data are

used by the DIMM manufacturer. The last 128 bytes

are available to the customer.

All IBM 168-pin DIMMs provide a high-performance,

flexible 8-byte interface in a 5.25" long space-saving

footprint. Related products include both EDO DRAM

and SDRAM unbuffered DIMMs in both non-parity

x64 and ECC-Optimized x72 configurations.

Card Outline

(Front)

(Back)

10 11

94 95

40 41

124 125

168

06K3912.H01723

1/00

Use is further subject to the provisions at the end of this document.

Page 1 of 18

IBM13N16644JCA-360T Related Products

	IBM13N16644JCA-360T	IBM13N16644JCA-260T	IBM13N16734JCA-260T	IBM13N16734JCA-360T
Description	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 16MX72, 6ns, CMOS, DIMM-168
Maker	IBM	IBM	IBM	IBM
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	6 ns	6 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	100 MHz	100 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	1073741824 bit	1073741824 bit	1207959552 bit	1207959552 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	72	72
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX72	16MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096
self refresh	YES	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.009 A	0.009 A
Maximum slew rate	1.48 mA	1.48 mA	1.665 mA	1.665 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	-

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