P4SMA100CHF2G datasheet, PDF - EEWORLD Datasheet

P4SMA100CHF2G: DescriptionTVS DIODE; CategoryDiscrete semiconductor diode; File Size362KB，8 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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P4SMA100CHF2G Overview

TVS DIODE

Parameter Name	Attribute value
Objectid	8096742847
package instruction	R-PDSO-C2
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	6.98
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	110 V
Minimum breakdown voltage	90 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	400 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	BIDIRECTIONAL
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	81 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	30

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