CAT28LV256T13-35TE13 datasheet, PDF

CAT28LV256T13-35TE13: DescriptionIC 32K X 8 EEPROM 3V, 350 ns, PDSO28, 8 X 13.40 MM, TSOP-28, Programmable ROM; Categorystorage storage; File Size70KB，12 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT28LV256T13-35TE13 Overview

IC 32K X 8 EEPROM 3V, 350 ns, PDSO28, 8 X 13.40 MM, TSOP-28, Programmable ROM

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TSOP
package instruction	TSOP1,
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	350 ns
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	11.8 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	2
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	8 mm
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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