DISCRETE SEMICONDUCTORS
DATA SHEET
BF820W; BF822W
NPN high-voltage transistors
Product specification
Supersedes data of 1997 Jun 19
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT323 plastic package.
MARKING
TYPE NUMBER
BF820W
BF822W
MARKING CODE
1Vt
1Wt
1
Top view
3
BF820W; BF822W
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
1
2
2
MAM062
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BF820W
BF822W
V
CEO
collector-emitter voltage
BF820W
BF822W
I
CM
P
tot
h
FE
C
re
f
T
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
T
amb
≤
25
°C
I
C
= 25 mA; V
CE
= 20 V
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
open base
−
−
−
−
50
−
60
300
250
100
200
−
1.6
−
pF
MHz
V
V
mA
mW
open emitter
−
−
300
250
V
V
CONDITIONS
MIN.
MAX.
UNIT
1997 Sep 03
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BF820W
BF822W
V
CEO
collector-emitter voltage
BF820W
BF822W
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BF820W; BF822W
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
300
250
300
250
5
50
100
50
200
+150
150
+150
UNIT
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
625
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
E
= 0; V
CB
= 200 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5mA; note 1
I
C
= i
c
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
−
−
−
50
−
−
60
MIN.
MAX.
10
10
50
−
600
1.6
−
mV
pF
MHz
UNIT
nA
µA
nA
1997 Sep 03
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BF820W; BF822W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Limiting values
BF820W; BF822W
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
5