Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
Parameter Name | Attribute value |
Maker | Microsemi |
package instruction | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 200 V |
Maximum drain current (ID) | 16 A |
Maximum drain-source on-resistance | 0.18 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-257 |
JESD-30 code | R-MSFM-P3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | METAL |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
Transistor component materials | SILICON |
Base Number Matches | 1 |