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EM636165BE-55G

Description
Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60
Categorystorage    storage   
File Size789KB,75 Pages
ManufacturerEtron
Websitehttp://www.etron.com/
Environmental Compliance
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EM636165BE-55G Overview

Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60

EM636165BE-55G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid106352994
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time5 ns
Maximum clock frequency (fCLK)183 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PBGA-B60
memory density16777216 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of terminals60
word count1048576 words
character code1000000
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA60,7X15,25
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.16 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.635 mm
Terminal locationBOTTOM

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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