IRFBE30SPbF
IRFBE30LPbF
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead-Free
D
PD - 95507
HEXFET
®
Power MOSFET
V
DSS
= 800V
R
DS(on)
= 3.0Ω
S
G
I
D
= 4.1A
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
D
2
Pak
IRFBE30S
TO-262
IRFBE30L
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Max.
4.1
2.6
16
125
1.0
± 20
260
4.1
13
2.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
c
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
Peak Diode Recovery dv/dt
e
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
c
d
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
–––
–––
–––
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
°C/W
Document Number: 91119
07/06/04
www.vishay.com
1
IRFBE30S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
800
–––
–––
2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.90
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
33
82
30
4.5
7.5
1300
310
190
–––
–––
3.0
4.0
–––
100
500
100
-100
78
9.6
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
Ω
V
GS
= 10V, I
D
= 2.5A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 100V, I
D
= 2.5A
µA V
DS
= 800V, V
GS
= 0V
V
DS
= 640V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
nC I
D
= 4.1A
V
DS
= 400V
V
GS
= 10V, See Fig. 6 & 13
V
DD
= 400V
ns I
D
= 4.1A
R
G
= 12Ω
R
D
= 95Ω, See Fig. 10
D
nH Between lead,
f
f
f
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
G
S
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
480
1.8
4.1
A
16
1.8
720
2.7
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 4.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.1A
di/dt = 100A/µs
f
S
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
V
DD
=50V, starting T
J
= 25°C, L=29mH, R
G
=25Ω
,
I
SD
≤
4.1A, di/dt
≤
100A/µs, V
DD
≤
600,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
I
AS
= 4.1A. (See Figure 12).
Document Number: 91119
www.vishay.com
2
京公网安备 11010802033920号
EEWORLD
