IRCC244PBF datasheet, PDF - EEWORLD Datasheet

IRCC244PBF: DescriptionPower Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size23KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRCC244PBF Overview

Power Field-Effect Transistor, 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	UNCASED CHIP, R-XUUC-N4
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	250 V
Maximum drain-source on-resistance	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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