IRF5NJZ34PBF datasheet, PDF - EEWORLD Datasheet

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IRF5NJZ34PBF: DescriptionPower Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size113KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF5NJZ34PBF Overview

Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN

IRF5NJZ34PBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	43 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	88 A
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 94600

HEXFET

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRF5NJZ34

BVDSS

IRF5NJZ34

55V, N-CHANNEL

DS(on)

0.04Ω

22A*

55V

Fifth Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

SMD-0.5

Features:

Low R

DS(on)

Avalanche Energy Ratings

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

* Current is limited by package

For footnotes refer to the last page

22*

0.32

±20

4.0

1.8

-55 to 150

Units

W/°C

V/ns

300 (for 5 s)

1.0

www.irf.com

02/07/03

IRF5NJZ34PBF Related Products

	IRF5NJZ34PBF	IRF5NJZ34E	IRF5NJZ34ESCX	IRF5NJZ34SCX
Description	Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN	Power Field-Effect Transistor, 22A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-0.5, 3 PIN
Is it lead-free?	Lead free	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3	CHIP CARRIER, R-XBCC-N3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	43 mJ	43 mJ	43 mJ	43 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	60 V	60 V	55 V
Maximum drain current (ID)	22 A	22 A	22 A	22 A
Maximum drain-source on-resistance	0.04 Ω	0.042 Ω	0.042 Ω	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-CBCC-N3	R-XBCC-N3	R-XBCC-N3	R-XBCC-N3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	88 A	88 A	88 A	88 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
JESD-609 code	-	e0	e0	e0
Terminal surface	-	TIN LEAD	TIN LEAD	TIN LEAD

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