6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111
PACKAGE
MOC8112
MOC8113
SCHEMATIC
ANODE 1
6 N/C
6
1
6
CATHODE 2
5 COLLECTOR
1
N/C 3
4 EMITTER
6
1
DESCRIPTION
The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not
bonded to an external pin for improved noise immunity
FEATURES
• High isolation voltage
5300 VAC RMS—1 minute
• High BV
CEO
minimum 70 Volts
• Current transfer ratio in selected groups:
MOC8111: 20% min.
MOC8112: 50% min.
MOC8113: 100% min.
• Maximum switching time in saturation specified
• Underwriters Laboratory (UL) recognized (File #E90700)
• VDE recognized (File #94766)
APPLICATIONS
•
•
•
•
•
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
© 2004 Fairchild Semiconductor Corporation
Page 1 of 10
6/9/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111
MOC8112
MOC8113
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
Parameter
INPUT LED
Forward Current – Continuous
Forward Current – Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
OUTPUT TRANSISTOR
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
(1/16” from case, 10 sec. duration)
P
D
T
OPR
T
STG
T
SOL
260
3.5
-55 to +100
-55 to +150
260
mW
mW/°C
°C
°C
°C
P
D
200
2.67
mW
mW/°C
I
F
I
F
(pk)
V
R
P
D
90
3
6
135
1.8
mA
A
Volts
mW
mW/°C
Symbol
Value
Unit
© 2004 Fairchild Semiconductor Corporation
Page 2 of 10
6/9/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111
MOC8112
MOC8113
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Voltage
Capacitance
Reverse Leakage Current
DETECTOR
Breakdow Voltage
Collector to Emitter
Breakdow Voltage
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CE
= 0 V, f = 1 MHz
BV
CEO
BV
ECO
I
CEO
C
CE
All
All
All
All
70
7
5
8
50
V
V
V
pF
I
F
= 60 mA
I
F
= 10 mA
I
R
= 10 µA
V
F
= 0 V, f = 1.0 MHz
V
F
= 1 V, f = 1.0 MHz
V
R
= 3.0 V
V
F
V
R
C
J
I
R
All
All
All
All
6.0
1.35
1.15
15
50
65
.35
10
1.65
1.50
V
V
pF
µA
Test Conditions
Symbol
Device
Min
Typ
Max
Unit
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 min.
V
I-O
= 500 VDC
V
I-O
= 0, f = 1 MHz
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.5
Typ
Max
Units
V
RMS
Ω
pF
© 2004 Fairchild Semiconductor Corporation
Page 3 of 10
6/9/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111
MOC8112
MOC8113
TRANSFER CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
DC CHARACTERISTICS
Output/Input Current Transfer
Ratio
Collector-Emitter Saturation
Voltage
AC CHARACTERISTICSØ
Non-Saturated Switching Times
Turn-On Time
Turn-Off Time
Saturated Switching Times
Turn-On Time
Rise-Time
Turn-Off Time
Fall-Time
I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
I
F
= 20 mA, V
CE
= 0.4 V
I
F
= 10 mA, V
CE
= 0.4 V
t
on
t
r
t
off
t
f
MOC8111
MOC812, MOC8113
MOC8111
MOC812, MOC8113
MOC8111
MOC812, MOC8113
MOC8111
MOC812, MOC8113
3.0
4.2
2.0
3.0
18
23
11
14
5.5
8.0
4.0
6.0
34
39
20
24
µS
µS
µS
µS
R
L
= 100
Ω
, I
C
= 2 mA,
V
CC
= 10 V
See Figure 7
t
on
t
off
All
All
6.0
5.5
10
10
µS
µS
Test Conditions
Symbol
Device
MOC8111
I
F
= 10 mA, V
CE
= 5V
CTR
MOC8112
MOC8113
I
F
= 10 mA, I
C
= 2.5 mA
Test Conditions
V
CE(SAT)
Symbol
All
Device
Min
Min
20
50
100
0.27
Typ
0.4
Max
V
Units
%
Typ
Max
Units
© 2004 Fairchild Semiconductor Corporation
Page 4 of 10
6/9/04
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111
TYPICAL PERFORMANCE CURVES
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.4
T
A
= 25°C
V
CE
= 5.0 V
1.2
Normalized to
I
F
= 10 mA
MOC8112
MOC8113
Fig. 2 Normalized CTR vs. Forward Current
1.7
V
F
- FORWARD VOLTAGE (V)
1.6
1.0
1.5
T
A
= -55°C
1.4
NORMALIZED CTR
100
0.8
0.6
1.3
1.2
T
A
= 25°C
1.1
T
A
= 100°C
1.0
1
10
0.4
0.2
0.0
0
5
10
15
20
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.6
V
CE (sat)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 4 Collector Emitter Saturation Voltage
vs Collector Current
100
1.4
I
F
= 5 mA
10
NORMALIZED CTR
1.2
I
F
= 10 mA
1.0
1
I
F
= 2.5 mA
0.1
0.8
I
F
= 20 mA
0.6
Normalized to
I
F
= 10 mA
T
A
= 25°C
-50
-25
0
25
50
75
100
125
0.01
I
F
= 5 mA
T
A
= 25°C
0.001
0.01
0.1
1
I
F
= 10 mA
I
F
= 20 mA
0.4
-75
10
T
A
- AMBIENT TEMPERATURE (°C)
I
C
- COLLECTOR CURRENT (mA)
© 2004 Fairchild Semiconductor Corporation
Page 5 of 10
6/9/04
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