ILD3/ ILQ3
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
• Current Transfer Ratio at I
F
= 1.6 mA
• Double Molded Package Offers Isolation Test
Voltage 5300 V
RMS
, 1.0 sec.
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Dual Channel
A 1
C 2
C 3
A
4
8 E
7 C
6 C
5 E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• FIMKO
Quad Channel
A
1
C
C
A
2
3
4
5
6
7
8
16
E
15
C
14
C
13
E
12
E
11
C
10
C
9
E
Description
The ILD3/ ILQ3 are optically coupled isolated pairs
employing GaAs infrared LEDs and silicon NPN pho-
totransistors. Signal information, including a DC level,
can be transmitted by the drive while maintaining a
high degree of electrical isolation between input and
output. The ILD3/ ILQ3 are especially designed for
driving medium-speed logic and can be used to elim-
inate troublesome ground loop and noise problems.
Also these couplers can be used to replace relays and
transformers in many digital interface applications
such as CTR modulation. The ILD3 has two isolated
channels in a single DIP package and the ILQ3 has
four isolated channels per package.
A
C
C
A
i179012
e3
Pb
Pb-free
Order Information
Part
ILD3-1
ILD3-2
ILQ3-1
ILQ3-2
Remarks
CTR > 300 %, Dual Channel DIP-8
CTR > 100 %, Dual Channel DIP-8
CTR > 300 %, Quad Channel DIP-16
CTR > 100 %, Quad Channel DIP-16
For additional information on the available options refer to
Option Information.
Document Number 83655
Rev. 1.4, 02-Dec-04
www.vishay.com
1
ILD3/ ILQ3
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse current
Forward continuous current
Surge current
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
1.3
Unit
V
mA
A
mW
mW/°C
Output
Parameter
Collector-emitter breakdown
voltage
Collector current
t < 1.0 ms
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
BV
CEO
I
C
I
C
P
diss
Value
50
50
400
200
2.6
Unit
V
mA
mA
mW
mW/°C
Coupler
Parameter
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
Isolation test voltage (between t = 1 sec.
emitter and detector, refer to
standard climate 23°C/50% RH,
DIN50014)
Creepage
Clearance
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Power dissipation
Derate linearly from 25 °C
Storage temperature range
Operating temperature range
Junction temperature
Soldering temperature
2.0 mm case bottom
T
stg
T
amb
T
j
T
sld
R
IO
R
IO
P
tot
≥
7
≥
7
10
12
10
11
250
3.3
- 40 to + 150
- 40 to + 100
100
260
mm
mm
Ω
Ω
mW
mW/°C
°C
°C
°C
°C
www.vishay.com
2
Document Number 83655
Rev. 1.4, 02-Dec-04
ILD3/ ILQ3
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
lead
Test condition
I
F
= 60 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
R
thjl
Symbol
V
F
I
R
Min
Typ.
1.25
0.01
25
750
Max
1.65
10
Unit
V
µA
pF
K/W
Output
Parameter
Collector-emitter leakage
current
Collector-emitter capacitance
Thermal resistance, junction to
lead
Test condition
V
CE
= 15 V
V
CE
= 5.0 V, f = 1.0 MHz
Symbol
I
CEO
C
CE
R
thjl
Min
Typ.
5.0
6.8
500
Max
70
Unit
nA
pF
K/W
Coupler
Parameter
Capacitance (input-output)
Test condition
V
IO
= 0 V, f = 1.0 MHz
Symbol
C
IO
Min
Typ.
0.8
Max
Unit
pF
Current Transfer Ratio
Parameter
Saturated Current Transfer
Ratio (ILD/Q3-1)
Saturated Current Transfer
Ratio (ILD/Q3-2)
Test condition
I
F
= 1.6 mA, V
CE
= 0.4 V
I
F
= 1.0 mA, V
CE
= 0.4 V
Symbol
CTR
sat
CTR
sat
Min
300
100
Typ.
Max
Unit
%
%
Common Mode Transient Immunity
Parameter
Common mode rejection output
high
Common mode rejection output
low
Common mode coupling
capacitance
Test condition
V
CM
= 50 V
P-P
, R
L
= 10 KΩ,
I
F
= 0 mA
V
CM
= 50 V
P-P
, R
L
= 10 KΩ
I
F
= 0 mA
Symbol
CM
H
CM
L
C
CM
Min
Typ.
5000
5000
0.01
Max
Unit
V/µs
V/µs
pF
Document Number 83655
Rev. 1.4, 02-Dec-04
www.vishay.com
3
ILD3/ ILQ3
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
.255 (6.48)
.268 (6.81)
5
6
7
8
ISO Method A
3
2
1
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.018 (.46)
.022 (.56)
i178006
.300 (7.62)
typ.
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
3°–9°
.008 (.20)
.012 (.30)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12 13
14
15
16
ISO Method A
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
i178007
.300 (7.62)
typ.
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
www.vishay.com
4
Document Number 83655
Rev. 1.4, 02-Dec-04
ILD3/ ILQ3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83655
Rev. 1.4, 02-Dec-04
www.vishay.com
5
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