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EM6AB160TSD-4G

Description
DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66
Categorystorage    storage   
File Size466KB,61 Pages
ManufacturerEtron
Websitehttp://www.etron.com/
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EM6AB160TSD-4G Overview

DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.65 MM PITCH, HALOGEN AND LEAD FREE, TSOP2-66

EM6AB160TSD-4G Parametric

Parameter NameAttribute value
Objectid1281742278
package instructionTSOP2,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals66
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width10.16 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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