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APTDR70X1601G

Description
rect diode module 3ph 1600v sp1
CategoryDiscrete semiconductor    diode   
File Size227KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

APTDR70X1601G Overview

rect diode module 3ph 1600v sp1

APTDR70X1601G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-XUFM-T12
Contacts12
Reach Compliance Codecompli
Minimum breakdown voltage1600 V
Shell connectionISOLATED
ConfigurationBRIDGE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-XUFM-T12
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current600 A
Number of components6
Phase3
Number of terminals12
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current70 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
APTDR70X1601G
3 Phase rectifier bridge
Power Module
5
CR1
7
8
CR2
9
10
CR4
CR3
11
12
CR6
6
CR5
Application
Input rectifiers for inverter
Battery DC power supply
V
RRM
= 1600V
I
C
= 70A @ Tc = 80°C
Features
Benefits
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS compliant
High blocking voltage
High surge current
Low leakage current
Very low stray inductance
- Symmetrical design
High level of integration
1
2
All multiple inputs and outputs must be shorted together
1/2 ; 5/6 ; 7/8 ; 9/10 ; 11/12
Absolute maximum ratings
Symbol
V
R
V
RRM
I
F
I
FSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
DC Forward Current
Non-Repetitive Forward Surge Current
Max ratings
1600
t=10ms
T
C
= 80°C
T
J
= 45°C
70
600
Unit
V
A
APTDR70X1601G – Rev 0 August, 2007
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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