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T60N1200BOF

Description
Silicon Controlled Rectifier, 60000mA I(T), 1200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size600KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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T60N1200BOF Overview

Silicon Controlled Rectifier, 60000mA I(T), 1200V V(DRM),

T60N1200BOF Parametric

Parameter NameAttribute value
Objectid1167303061
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time180 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current150 mA
Maximum DC gate trigger voltage1.4 V
Maximum holding current200 mA
Maximum leakage current25 mA
On-state non-repetitive peak current1400 A
Maximum on-state current60000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1200 V
surface mountNO
Trigger device typeSCR

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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