HB56D136SB-8A datasheet, PDF - EEWORLD Datasheet

HB56D136SB-8A: DescriptionFast Page DRAM Module, 1MX36, 80ns, CMOS, SIMM-72; Categorystorage storage; File Size381KB，13 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56D136SB-8A Overview

Fast Page DRAM Module, 1MX36, 80ns, CMOS, SIMM-72

Parameter Name	Attribute value
Maker	Hitachi （Renesas ）
Parts packaging code	SIMM
package instruction	SIMM, SSIM72
Contacts	72
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width	18
I/O type	COMMON
JESD-30 code	R-XSMA-N72
memory density	37748736 bit
Memory IC Type	FAST PAGE DRAM MODULE
memory width	36
Number of functions	1
Number of ports	1
Number of terminals	72
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX36
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	31.75 mm
Maximum standby current	0.012 A
Maximum slew rate	1 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE
Base Number Matches	1

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