CRYSTAL OSCILLATORS
OM-X8GXXXXX-X Series
HF/UHF OCXO Low Power
Description:
The OM-X8GXXXXX Series of Oven
Controlled Crystal Oscillators (OCXO) provides High and Ultra
High Frequency with SC-cut stability performance, extremely low
phase noise and power consumption, with either CMOS or Sine-
wave output in a standard 1.4x1” package – “Europack”.
Data Sheet 0740B
Rev. F
0.75 (19,05 mm)
Features
•
•
•
•
•
•
Very Low Power Consumption
Very Low Phase Noise
Excellent SC-cut Frequency Stability
Ultra High Frequency – up to 1 GHz
CMOS, Sine-Wave outputs available
Stratum3E available
0.25 (6,35 mm)
Ø0.030 (0,76 mm) TYP
1.00 (25,40 mm)
3
4
0.70 (17,78 mm)
2
1.07 (27,20 mm)
1
5
1.42 (36,1 mm)
Creating a Part Number
OM – X 8G X X XX X - X - FREQ
Package Code
OM 5 pin 26 x 27x19mm high
Environmental
Code
L
Specification
Contains a level of lead
that is in excess of
RoHS directive and is
not designed for reflow
RoHS compliant, not
designed for reflow
Supply Voltage
Code
0
A
Specification
5V ±5%
3.3V ±5%
R
Temperature Range
Temperature Stability
Output Type
Code
17
58
28
18
YZ
Specification
1x10
-7
5x10
-8
2x10
-8
1x10
-8
Yx10
-Z
Code
A
B
C
D
E
F
G
Specification
0°C to 50°C
0°C to 70°C
-20°C to 70°C
-40°C to 85°C
-10°C to 60°C
-40°C to 80°C
-30°C to 70°C
OCXO/OCVCXO Option
Code
X
V
Specification
No V. Control
W/ V. Control
Code
C
S
Specification
CMOS
Sine-wave
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
CRYSTAL OSCILLATORS
WOM-X8GXXXXX-X Series HF/UHF OCXO Low Power
Specifications
Parameter
Symb
Input Break
Down Voltage
Storage temp.
Contr. Voltage
Vcc
Ts
Vc
F
CMOS
Sine-wave
Data Sheet 0740B
Rev. F
Condition
Min
Typ
Max
Unit
Note
Absolute Maximum Ratings
-0.5
-40
1
30
30
3.135
4.75
3.30
5.0
5.5
85
9
200
1,000
3.465
5.25
90
160
V
°C
V
MHz
Electrical
Frequency Range
Input Voltage
Input Current
Frequency Stability
Vcc
Icc
ΔF/F
vs. Temperature
vs. Vcc
aging
As shipped, 25ºC
CMOS
Sine
@50%
20 to 80 %
CMOS
CMOS
Sinewave Into 50
Ohm
1σ
Sine
CMOS, Sine
Sine-wave
@10 Hz
@100 Hz
@1 KHz
@10 KHz
@100 KHz
@10 Hz
@100 Hz
@1 KHz
@10 KHz
@100 KHz
Vc
MB
0V to Vc max
V
mA
Calibration
Load
Duty cycle
Rise/Fall time
Logic "1" level
Logic "0" level
Output power
Start up time
Phase jitter
Subharmonics
Spurious
Harmonics
SSB Phase Noise
ΔF/F
Tr/Tf
Voh
Vol
P
Ts
±50
ppb
±2
ppb/V
±0.1
ppm/year
±0.5
ppm
±0.1
ppm
15pF/10KOhm
Internally AC-coupled 50 Ohm
45
50
55
%
3
ns
0.9Vcc
V
0.1Vcc
V
0
4
3
7
2
0.4
0.2
-45
dBm
10
1
0.4
-40
none
-60
-25
ms
ps
dBc
dBc
dBc
dBc/Hz
A
0
@ 100 MHz, 3.3V
@ 622 MHz, 3.3V
See chart
First Year
15 years
CMOS
CMOS
3.3V
5.0V
100 Hz to 20 MHz
12 KHz to 20 MHz
F>250MHz
F< 250 MHz
SSB Phase Noise
Input Impedance
Control voltage
Modulation
bandwidth
Deviation
-30
-100
-120
-140
-160
-165
-80
-90
-120
-145
-150
> 10KOhm
0
0
2Hz
±0.5
±1.0
@100 MHz
dBc/Hz
@622 MHz;
Sine
4.0
2.8
V
V
Vcc code “0”
Vcc code “A”
Contact Factory for
wider MB
ppm
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
CRYSTAL OSCILLATORS
OM-X8GXXXXX-X Series
HF/UHF OCXO Low Power
Data Sheet 0740B
Rev. F
Environmental and Mechanical
0°C to 70°C , -40°C to 85°C, see chart, page 1
Operating temp.
range
Per MIL-STD-202, Method 213, Cond. E
Mechanical Shock
Per MIL-STD-883, Method 1011, Cond. A
Thermal Shock
Per MIL-STD-883, Method 2007, Cond. A
Vibration
260°C for 10 s leads only
Soldering Conditions
Hermetic Seal
Leak rate less than 5x10-8 atm.cc/s of helium
Electrical Connections
Pin Out
Pin #1- Voltage Control ; Pin #2 – Vref ; Pin #3 – Vcc; Pin#4 – Output, CMOS or
Sine; Pin#5 - GND
357 Beloit Street, P.O. Box 457, Burlington, WI 53105-0457 U.S.A. Phone 262/763-3591 FAX 262/763-2881
Email:
nelsales@nelfc.com
www.nelfc.com
MCU
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