CN3G datasheet, PDF - EEWORLD Datasheet

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CN3G: DescriptionCELL RECTIFIER DIODES; CategoryDiscrete semiconductor diode; File Size18KB，2 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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CN3G Overview

CELL RECTIFIER DIODES

CN3G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	O-CEDB-N2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	200 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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CN3A - CN3M

PRV : 50 - 1000 Volts

Io : 3.0 Amperes

FEATURES :

*

High current capability

High surge current capability

High reliability

Low reverse current

Low forward voltage drop

Chip form

CELL RECTIFIER DIODES

C3A

3.94

3.18

Anode

1.30

Cathode

0.51

MECHANICAL DATA :

* Case : C3A

* Terminals : Solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Cathode to bigger size slug, For

Anode to bigger size slug use "R" suffix.

* Mounting position : Any

* Weight : 0.11 gram

Dimensions in millimeter

0.38

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Tc = 75°C

Peak Forward Surge Current Single half sine wave

superimposed on rated load (JEDEC Method)

Maximum Forward Voltage at I

F

= 3 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL

CN3A CN3B CN3D CN3G CN3J CN3K CN3M

UNIT

V

RRM

V

RMS

V

DC

I

F(AV)

50

35

50

100

70

100

200

140

200

400

280

400

3.0

600

420

600

800

560

800

1000

700

1000

Volts

Amps.

I

FSM

V

F

I

R

I

R(H)

C

J

R

θ

JC

T

J

T

STG

200

1.1

5.0

1.0

28

15

- 65 to + 175

Amps.

Volts

µA

mA

pF

°C/W

°C

Typical Junction Capacitance (Note 1)

Thermal Resistance, Junction to Case

Junction Temperature Range

Storage Temperature Range

Note

: (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 V

DC

UPDATE : APRIL 23, 1998

CN3G Related Products

	CN3G	CN3B	CN3D	CN3A	CN3K	CN3J	CN3M
Description	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES	CELL RECTIFIER DIODES
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	200 A	200 A	200 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	400 V	100 V	200 V	50 V	800 V	600 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END	END
Base Number Matches	1	1	1	1	1	1	1

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