EEWORLDEEWORLDEEWORLD

Part Number

Search

VT-800-EFG-206A-25M0000000TR

Description
Clipped Sine Output Oscillator, 25MHz Nom
CategoryPassive components    oscillator   
File Size367KB,7 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

VT-800-EFG-206A-25M0000000TR Overview

Clipped Sine Output Oscillator, 25MHz Nom

VT-800-EFG-206A-25M0000000TR Parametric

Parameter NameAttribute value
Objectid145208536056
package instructionLCC4,.12X.2,145/90
Reach Compliance Codeunknown
YTEOL3
Ageing1 PPM/YEAR
Maximum control voltage2.5 V
Minimum control voltage0.5 V
Frequency Adjustment - MechanicalNO
Frequency offset/pull rate5 ppm
frequency stability2%
Installation featuresSURFACE MOUNT
Number of terminals4
Nominal operating frequency25 MHz
Maximum operating temperature80 °C
Minimum operating temperature-30 °C
Oscillator typeCLIPPED SINE
Output impedance10000 Ω
Output level0.8 V
Package body materialCERAMIC
Encapsulate equivalent codeLCC4,.12X.2,145/90
physical size5mm x 3.2mm x 1.1mm
Maximum slew rate2 mA
Maximum supply voltage3.465 V
Minimum supply voltage3.135 V
Nominal supply voltage3.3 V
surface mountYES
VT-800
Temperature Compensated Crystal Oscillator
Previous Vectron Model VTC4
VT-800
Description
Vectron’s VT-800 Temperature Compensated Crystal Oscillator (TCXO) is a quartz stabilized, clipped sine wave output,
temperature compensated oscillator, operating off either 2.8, 3.0, 3.3 or 5.0 volt supply, hermetically sealed 5x3.2 mm ceramic
package.
Features
Clipped Sine Wave Output
Output Frequencies to 40 MHz
Fundamental Crystal Design
Optional VCXO Function available
Gold over nickel contact pads
Hermetically Sealed Ceramic SMD package
Applications
Wireless Communications
Base Stations
Point to point radios
Broadband Access
Test Equipment
Handsets
• Product is compliant to RoHS directive
and fully compatible with lead free assembly
Block Diagram
V
DD
Crystal
Output
Analog
Temperature
Comp.
Vcontrol or NC
Gnd
Page1
How to use Bluetooth 4.2 to implement the Internet of Things
In many wireless IoT devices, such as wearable electronics and battery-powered or self-powered sensors, it is critical to keep power consumption to a minimum. Some of the most important applications f...
fish001 RF/Wirelessly
What is the difference between silicon carbide, MOSFET and IGBT?
What is the difference between silicon carbide MOSFET and silicon MOSFET and IGBT? The difference between MOSFET and IGBT is quite obvious. MOSFET switches fast while IGBT switches slowly. MOSFET with...
bigbat Power technology
[AT-START-F403A Review] + Zero-distance contact
[i=s]This post was last edited by jinglixixi on 2020-9-24 22:00[/i]The long-awaited Arteli development board finally arrived. Whether it was the first time I saw its picture or now I have had a close ...
jinglixixi Domestic Chip Exchange
Understanding of a curve graph in Chapter 4 of "High Frequency Electronic Circuits. Zeng Xingwen Edition"
The red box says that formula 4-52 is converted to a graph, which means I don't understand it. After conversion, it should be Xe=1/W1CL. If CL is a constant, the variable is W1, then this should be ha...
S3S4S5S6 Analog electronics
GD32 ADC pin setting problem
The MCU model I use is GD32F103CBT6. My purpose is to use the CH0 and CH1 channels of ADC0 to collect voltage data. The circuit is not isolated or specially processed, that is, it is directly connecte...
bigbat GD32 MCU

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号