CM350DU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Dual IGBTMOD™
350 Amperes/250 Volts
A
B
T
C
Measured
Point
E
K 4 - Mounting
Holes
H
D
C
F
J
CM
H
3 - M6 NUTS
R
R
G
0.110 - 0.5 Tab
M
P
M
P
M
N
L
Q
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
High Frequency Operation
(15-20kHz)
□
Isolated Baseplate for Easy
Heat Sinking
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.33
3.66±0.01
3.15
2.44±0.01
0.55
0.86
0.94
0.24
Millimeters
110.0
93.0±0.25
80.0
62.0±0.25
14.0
21.75
24.0
6.0
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.59
0.26 Dia.
1.14 +0.04/-0.02
0.71
0.33
0.28
0.83
0.98
Millimeters
15.0
6.5 Dia.
29 +1.0/-0.5
18.0
8.5
7.0
21.0
25.0
Applications:
□
DC Motor Control
□
Boost Regulator
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (V
CES
), 350 Ampere Trench
Gate Design Dual IGBTMOD™
Power Module.
Type
CM
Current Rating
Amperes
350
V
CES
Volts (x 50)
5
361
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM350DU-5F
Trench Gate Design Dual IGBTMOD™
350 Amperes/250 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
V
iso
CM350DU-5F
-40 to 150
-40 to 125
250
±20
350
700
350
700*
960
26
26
520
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
I
C
= 35mA, V
CE
= 10V
I
C
= 350A, V
GE
= 10V, T
j
= 25°C
I
C
= 350A, V
GE
= 10V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage*
V
CC
= 100V, I
C
= 350A, V
GE
= 10V
I
E
= 350A, V
GE
= 0V
Min.
–
–
3.0
–
–
–
–
Typ.
–
–
4.0
1.2
1.10
1320
–
Max.
1
0.5
5.0
1.7
–
–
2.0
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 100V, I
C
= 350A,
V
GE1
= V
GE2
= 10V,
R
G
= 7.1Ω, Resistive
Load Switching Operation
I
E
= 350A, di
E
/dt = -700A/ms
I
E
= 350A, di
E
/dt = -700A/ms
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
5.7
Max.
99
4.5
3.4
1100
2400
900
500
300
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per Free-Wheel Diode
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
0.010
Max.
0.13
0.19
–
Units
°C/W
°C/W
°C/W
362
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM350DU-5F
Trench Gate Design Dual IGBTMOD™
350 Amperes/250 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
700
COLLECTOR CURRENT, I
C
, (AMPERES)
700
6
8
COLLECTOR CURRENT, I
C
, (AMPERES)
2.0
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
V
GE
= 15V
10
5.75
T
j
= 25
o
C
560
420
560
5.5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
1.6
1.2
0.8
0.4
V
GE
= 10V
T
j
= 25°C
T
j
= 125°C
420
280
140
5.25
280
140
0
5.0
4.75
4.5
0
0
1
2
3
0
0
2
4
6
8
10
0
140
280
420
560
700
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
4
5
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
5
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
3
T
j
= 25°C
10
2
T
j
= 25°C
C
ies
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
4
3
2
1
I
C
= 700A
EMITTER CURRENT, I
E
, (AMPERES)
10
2
10
1
C
oes
I
C
= 350A
10
1
10
0
C
res
I
C
= 140A
V
GE
= 0V
f = 1MHz
0
0
3
6
9
12
15
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
0
0.6
0.9
1.2
1.5
1.8
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
di/dt = -700A/µsec
T
j
= 25°C
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
4
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
3
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 350A
16
12
8
4
SWITCHING TIME, (ns)
10
3
t
d(off)
t
d(on)
t
f
V
CC
= 50V
t
rr
10
2
I
rr
10
2
V
CC
= 100V
10
2
t
r
V
CC
= 100V
V
GE
=
±10V
R
G
= 7.1
Ω
T
j
= 125°C
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
0.7
1.4
2.1
2.8
GATE CHARGE, Q
G
, (nC)
363
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM350DU-5F
Trench Gate Design Dual IGBTMOD™
350 Amperes/250 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-3
10
1
10
-2
10
-1
10
0
10
1
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
-3
10
1
10
-2
10
-1
10
0
10
1
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.13°C/W
10
0
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.19°C/W
10
-1
10
-1
10
-1
10
-1
10
-2
10
-2
10
-2
10
-2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
364
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