CM150TU-12F datasheet, PDF - EEWORLD Datasheet

CM150TU-12F: DescriptionTrench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts; CategoryDiscrete semiconductor The transistor; File Size122KB，4 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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CM150TU-12F Overview

Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-XUFM-X17
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	600 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND RTC
Gate-emitter maximum voltage	20 V
JESD-30 code	R-XUFM-X17
Number of components	6
Number of terminals	17
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	520 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
VCEsat-Max	2.2 V
Base Number Matches	1

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