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Datasheet> All Categories > Discrete semiconductor> The transistor> KSP8599BU
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KSP8599BU

Description
transistor pnp 80v 500ma TO-92
CategoryDiscrete semiconductor    The transistor   
File Size33KB，4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSP8599BU Overview

transistor pnp 80v 500ma TO-92

KSP8599BU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

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KSP8598/8599
KSP8598/8599
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
= KSP8598: 60V
KSP8599: 80V
• Collector Power Dissipation: P
C
(max)=625mW
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSP8598
: KSP8599
V
CEO
Collector-Emitter Voltage
: KSP8598
: KSP8599
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
1. Emitter 2. Base 3. Collector
Value
-60
-80
-60
-80
-5
-500
625
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
Parameter
Collector-Base Breakdown Voltage
: KSP8598
: KSP8599
* Collector-Emitter Breakdown Voltage
: KSP8598
: KSP8599
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: KSP8598
: KSP8599
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= -100µA, I
E
=0
Min.
-60
-80
I
C
= -10mA, I
B
=0
-60
-80
I
E
= -10µA, I
C
=0
V
CB
= -60V, I
E
=0
V
CB
= -80V, I
E
=0
V
CE
= -60V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -100mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -5V, I
E
=0
f=1MHz
-0.5
-0.6
150
8
100
100
75
-5
-100
-100
-100
-100
300
V
V
V
nA
nA
nA
nA
Max.
Units
V
V
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
: KSP8598
: KSP8599
Current Gain Bandwidth Product
Output Capacitance
-0.4
-0.3
-0.7
-0.8
V
V
V
V
MHz
pF
f
T
C
ob
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001

KSP8599BU Related Products

KSP8599BU KSP8599CTA KSP8599TF KSP8598TA
Description transistor pnp 80v 500ma TO-92 transistor pnp 80v 500ma TO-92 transistor pnp 80v 500ma TO-92 transistor pnp 60v 500ma TO-92
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 80 V 80 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 75 75 75
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.625 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz

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