V73CAG02168REUJJ11I datasheet, PDF

V73CAG02168REUJJ11I: DescriptionDDR DRAM,; Categorystorage storage; File Size2MB，57 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V73CAG02168REUJJ11I Overview

DDR DRAM,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	7215375031
package instruction	TFBGA,
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
Date Of Intro	2018-06-20
YTEOL	4.95
access mode	MULTI BANK PAGE BURST
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B96
length	13 mm
memory density	2147483648 bit
Memory IC Type	DDR3 DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	96
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature	-40 °C
organize	128MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	9 mm

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