TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
T
RANS
Zorb
®
Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-213AB (GL41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
WM
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
6.45 V to 210 V
5.8 V to 171 V
400 W, 200 W
1.0 W
40 A
150 °C
Uni-directional
DO-213 AB (GL41)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-213AB (GL41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity:
Blue band denotes the cathode which is positive
with respect to the anode under normal TVS operation
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Peak forward surge current, 8.3 ms half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
Operating junction and storage temperature range
SYMBOL
P
PPM
P
D
I
PPM
I
FSM
V
F
T
J
, T
STG
VALUE
400
1.0
See next table
40
3.5
- 55 to 150
UNIT
W
W
A
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 200 W above 91 V
A
(2)
Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Revision: 11-Dec-12
Document Number: 88403
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
1.46
1.32
1.21
1.12
0.97
0.91
0.85
0.81
0.73
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
V
BR (1)
(V)
MIN.
MAX.
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
1000
500
200
50.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
MAXIMUM
TEMPERATURE
COEFFICENT
OF V
BR
(%/°C)
0.060
0.064
0.068
0.071
0.076
0.078
0.081
0.084
0.087
0.089
0.091
0.093
0.095
0.097
0.099
0.100
0.101
0.102
0.103
0.104
0.104
0.105
0.106
0.107
0.107
0.108
0.108
0.109
0.109
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
TGL41-6.8A
6.45
7.14
10
5.80
TGL41-7.5A
7.13
7.88
10
6.40
TGL41-8.2A
7.79
8.61
10
7.02
TGL41-9.1A
8.65
9.55
1.0
7.78
TGL41-10A
9.5
10.5
1.0
8.55
TGL41-11A
10.5
11.6
1.0
9.40
TGL41-12A
11.4
12.6
1.0
10.2
TGL41-13A
12.4
13.7
1.0
11.1
TGL41-15A
14.3
15.8
1.0
12.8
TGL41-16A
15.2
16.8
1.0
13.6
TGL41-18A
17.1
18.9
1.0
15.3
TGL41-20A
19.0
21.0
1.0
17.1
TGL41-22A
20.9
23.1
1.0
18.8
TGL41-24A
22.8
25.2
1.0
20.5
TGL41-27A
25.7
28.4
1.0
23.1
TGL41-30A
28.5
31.5
1.0
25.6
TGL41-33A
31.4
34.7
1.0
28.2
TGL41-36A
34.2
37.8
1.0
30.8
TGL41-39A
37.1
41.0
1.0
33.3
TGL41-43A
40.9
45.2
1.0
36.8
TGL41-47A
44.7
49.4
1.0
40.2
TGL41-51A
48.5
53.6
1.0
43.6
TGL41-56A
53.2
58.8
1.0
47.8
TGL41-62A
58.9
65.1
1.0
53.0
TGL41-68A
64.6
71.4
1.0
58.1
TGL41-75A
71.3
78.8
1.0
64.1
TGL41-82A
77.9
86.1
1.0
70.1
TGL41-91A
86.5
95.5
1.0
77.8
TGL41-100A
95.0
105
1.0
85.5
TGL41-110A
105
116
1.0
94.0
TGL41-120A
114
126
1.0
102
TGL41-130A
124
137
1.0
111
TGL41-150A
143
158
1.0
128
TGL41-160A
152
168
1.0
136
TGL41-170A
162
179
1.0
145
TGL41-180A
171
189
1.0
154
TGL41-200A
190
210
1.0
171
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(2)
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION
(Example)
PREFERRED PIN
TGL41-6.8A-E3/96
TGL41-6.8A-E3/97
UNIT WEIGHT (g)
0.134
0.134
PREFERRED PACKAGE CODE
96
97
BASE QUANTITY
1500
5000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 11-Dec-12
Document Number: 88403
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
Non-Repetitive
Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
10 000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
10
TGL41-6.8
1
TGL91A
1000
Measured at
Zero Bias
100
Measured at Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
TGL41-100
0.1
0.1 µs
1.0 µs
TGL200A
10 µs
100 µs
1.0 ms
10 ms
Uni-Directional
100
1000
10
1
10
t
d
- Pulse Width
Fig. 1 - Peak Pulse Power Rating Curve
V
BR
- Breakdown Voltage (V)
Fig. 4 -
Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentace (%)
100
1.00
75
50
25
P
D
- Power Dissipation (W)
0
25
50
75
100
125
150
175
200
0.75
0.50
0.25
0
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temerature (°C)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
T
L
- Lead Temerature (°C)
Fig. 5 -
Power Derating Curve
150
I
PPM
- Peak Pulse Current, % I
RSM
Peak Value
I
PPM
100
Half Value - I
PP
I
PPM
2
Peak Forward Surge Current (A)
t
r
= 10 µs
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
50
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
40
30
50
10/1000 µs Waveform
as defined
by
R.E.A.
20
10
t
d
0
0
1.0
2.0
3.0
4.0
0
1
10
100
t - Time (ms)
Fig. 3 - Pulse Waveform
Number
of Cycles at 60 Hz
Fig. 6 -
Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Revision: 11-Dec-12
Document Number: 88403
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
DO-213AB (GL41)
Mounting Pad Layout
Solderable Ends
1
st
Band
D2 = D1 + 0
- 0.008 (0.20)
0.138 (3.5)
MAX.
D2
D1 =
0.105
0.095
(2.67)
(2.41)
0.118 (3.0)
MIN.
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.022 (0.56)
0.018 (0.46)
0.049 (1.25)
MIN.
0.238 (6.0)
REF.
1
st
Band Denotes Type and Positive End (Cathode)
Revision: 11-Dec-12
Document Number: 88403
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000