Preliminary
Datasheet
RJK60S3DPP-E0
600V - 12A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.35
typ. (at I
D
= 6 A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 21 ns typ. (at I
D
= 6 A, V
GS
= 10 V, R
L
= 50
,
Rg = 10
,
Ta = 25C)
R07DS0637EJ0300
Rev.3.00
Oct 12, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Limited by Tch max.
Maximum duty cycle D = 0.75
STch = 25C, Tch
150C
Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1,2
I
D Note1,2
I
D (pulse)Note1
I
DR Note1
I
DR (pulse)Note1
I
AP
E
ARNote3
Pch
Note4
ch-c
Tch
Tstg
Note3
Ratings
600
+30,
20
12.0
7.6
24
12
24
3
0.49
27.7
4.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0637EJ0300 Rev.3.00
Oct 12, 2012
Page 1 of 7
RJK60S3DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Gate resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
Rg
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
I
rr
Q
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.35
0.87
2.5
720
980
3.7
13
18
25
18
13.6
4.8
3.9
1.0
320
20
3.7
Max
—
1
±0.1
5
0.44
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
= +30V,
20
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note5
Ta = 150°C
Note5
I
D
= 6 A, V
GS
= 10 V
f = 1 MHz
V
DS
= 25 V, V
GS
= 0
V
DS
= 25 V
V
GS
= 0
f = 100 kHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 50
Note5
Rg = 10
V
DD
= 480 V
V
GS
= 10 V
Note5
I
D
= 12 A
I
F
= 12 A, V
GS
= 0
Note5
I
F
= 12 A
V
GS
= 0
Note5
di
F
/dt = 100 A/s
R07DS0637EJ0300 Rev.3.00
Oct 12, 2012
Page 2 of 7
RJK60S3DPP-E0
Preliminary
Main Characteristics
Channel Dissipation vs.
Case Temperature
40
100
Maximum Safe Operation Area
Channel Dissipation Pch (W)
I
D
(A)
30
10
10
PW
μ
s
=
Drain Current
20
10
0
μ
s
1
Operation in this area
is limited by R
DS(on)
10
0
0
25
50
75
100 125 150 175
0.1
1
Tc = 25°C
1 shot
10
100
1000
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
12
Typical Output Characteristics
Ta = 125°C
Pulse Test
8V
I
D
(A)
I
D
(A)
16
10
8
6
4
2
0
10 V
15 V
7V
8V
10 V
15 V
7V
6.5 V
12
6V
Drain Current
8
Drain Current
6.5 V
6V
4
5.5 V
V
GS
= 5 V
V
GS
= 5.5 V
0
0
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
DS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
10
V
GS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
Ta = 125°C
1
25°C
1
Tc = 75°C
25°C
0.1
−25°C
0.01
0
2
4
6
8
10
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0637EJ0300 Rev.3.00
Oct 12, 2012
Page 3 of 7
RJK60S3DPP-E0
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1.6
Preliminary
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1000
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
V
GS
= 10 V
Pulse Test
1.2
I
D
= 12 A
0.8
100
0.4
6A
3A
di/dt = 100 A/μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
−25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
Ta = 25°C
Ciss
2.0
C
OSS
Stored Energy (Typical)
Capacitance C (pF)
1000
1.6
E
OSS
(μJ)
100
Coss
10
Crss
V
GS
= 0, f = 100 kHz
0
50
100
150
200
250
300
1.2
0.8
1
0.4
0.1
0
0
50
100
150
200
250
300
Drain to Source Voltage
V
DS
(V)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics (Typical)
V
DS
(V)
I
DR
(A)
V
GS
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
V
GS
(V)
100
800
I
D
= 12 A
Ta = 25°C
V
DD
= 480 V
300 V
100 V
16
600
V
DS
400
12
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
10
Ta = 125°C
25°C
8
1
V
GS
= 0
Pulse Test
0.1
0
0.4
0.8
1.2
1.6
200
V
DD
= 480 V
300 V
100 V
4
8
12
16
20
4
0
0
0
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
R07DS0637EJ0300 Rev.3.00
Oct 12, 2012
Page 4 of 7
RJK60S3DPP-E0
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Preliminary
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
5
4
3
2
1
V
DS
= 10 V
0
−25
0
25
I
D
= 10 mA
Drain to Source Breakdown Voltage
V
(BR)DSS
(V)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
6
800
700
1 mA
0.1 mA
600
500
I
D
= 10 mA
V
GS
= 0
400
−25
0
25
50
75
100 125 150
50
75
100 125 150
Case Temperature
Tc (°C)
Case Temperature
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.5°C/W
P
DM
D=
PW
T
1m
10 m
100 m
1
10
100
PW
T
0.05
0.02
s
0.01
t pul
ho
1s
e
0.01
10
μ
100
μ
Pulse Width
PW (s)
R07DS0637EJ0300 Rev.3.00
Oct 12, 2012
Page 5 of 7
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